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000190090 0247_ $$2ISSN$$a1866-1793
000190090 020__ $$a978-3-95806-023-4
000190090 037__ $$aFZJ-2015-03049
000190090 041__ $$aEnglish
000190090 1001_ $$0P:(DE-Juel1)130224$$aBöttler, Wanjiao$$b0$$eCorresponding Author$$gfemale$$ufzj
000190090 245__ $$aLight scattering and trapping in thin film silicon solar cells with an n-i-p configuration$$f2014-10-31
000190090 260__ $$aJülich$$bForschungszentrum Jülich GmbH Zentralbibliothek, Verlag$$c2015
000190090 300__ $$a132 S.
000190090 3367_ $$0PUB:(DE-HGF)11$$2PUB:(DE-HGF)$$aDissertation / PhD Thesis$$bphd$$mphd$$s1430750893_23238
000190090 3367_ $$0PUB:(DE-HGF)3$$2PUB:(DE-HGF)$$aBook$$mbook
000190090 3367_ $$02$$2EndNote$$aThesis
000190090 3367_ $$2DRIVER$$adoctoralThesis
000190090 3367_ $$2BibTeX$$aPHDTHESIS
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000190090 3367_ $$2ORCID$$aDISSERTATION
000190090 4900_ $$aSchriften des Forschungszentrums Jülich Reihe Energie & Umwelt / Energy & Environment$$v245
000190090 502__ $$aRWTH Aachen, Diss., 2014$$bDr.$$cRWTH Aachen$$d2014
000190090 520__ $$aMicrocrystalline silicon $\mu$c-Si:H thin film solar cells with an n-i-p configuration were setup based on the optimized processes for solar cells with a p-i-n configuration. The depositionprocesses of window, absorber and front contact layers were optimized. The effects of thethickness and doping ratio of p-type layers, the thickness of the front contact layers and thesilane concentration of the absorber layers on the solar cell performance were investigated. For all the optimization and investigation, solar cells were prepared on simple glass/etched-ZnO substrates. To improve the short circuit current density, a highly reflective Ag/ZnO back reflector was added on glass/etched-ZnO substrates. Finally, a good process reproducibility and high cell performance were achieved as a base for the subsequent study of light scattering and trapping in $\mu$c-Si:H n-i-p solar cells.The effects of the surface morphology of back reflectors on their light-scattering properties and the light trapping in $\mu$c-Si:H n-i-p solar cells were investigated. Firstly, the surfaces of sputtered ZnO layers were textured by etching them in HCl solution. The surface morphology was varied by changing the as-deposited ZnO thickness and etching time and measured by Atomic Force Microscopy AFM. Based on the AFM measurement results, statistically evaluation of the ZnO surface morphology was performed in terms of not only therms roughness but also the diameter, depth and angle of surface features (craters) on thesurfaces. With such evaluation, the relationship between the surface morphology and lightscatteringproperties of reflectors was analysed and related to different physical mechanisms,such as diffraction and geometrical optics. Finally, etched-ZnO layers with different surfacemorphologies were covered with a thin Ag and ZnO layer and used together as back reflectorsin $\mu$c-Si:H n-i-p solar cells. This allows us to analyse the direct link between the surface morphology of back reflectors and light trapping in the solar cells. With this analysis, the most beneficial size and angle of craters for light trapping were estimated. In addition, to better understand the light trapping process in the solar cells, angular intensity distributions AIDs in silicon were simulated by the so-called “phase model” both for the transmission at the ZnO/$}mu$c-Si:H interface (as on the front side of solar cells) and for the reflection at the back reflector. The AIDs for the transmission were compared to those for the reflection with the same interface morphologies to estimate the dominant scattering process regarding the light trapping in solar cells.
000190090 536__ $$0G:(DE-HGF)POF3-121$$a121 - Solar cells of the next generation (POF3-121)$$cPOF3-121$$fPOF III$$x0
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000190090 773__ $$y2015
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000190090 9130_ $$0G:(DE-HGF)POF2-111$$1G:(DE-HGF)POF2-110$$2G:(DE-HGF)POF2-100$$aDE-HGF$$bEnergie$$lErneuerbare Energien$$vThin Film Photovoltaics$$x0
000190090 9131_ $$0G:(DE-HGF)POF3-121$$1G:(DE-HGF)POF3-120$$2G:(DE-HGF)POF3-100$$3G:(DE-HGF)POF3$$4G:(DE-HGF)POF$$aDE-HGF$$bEnergie$$lErneuerbare Energien$$vSolar cells of the next generation$$x0
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