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000190197 1001_ $$0P:(DE-HGF)0$$aGasparyan, F.$$b0
000190197 245__ $$aSingle trap in liquid gated nanowire FETs: Capture time behavior as a function of current
000190197 260__ $$aMelville, NY$$bAmerican Inst. of Physics$$c2015
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000190197 520__ $$aThe basic reason for enhanced electron capture time, τc , of the oxide single trap dependence on drain current in the linear operation regime of p+-p-p+ silicon field effect transistors (FETs) was established, using a quantum-mechanical approach. A strong increase of τc slope dependence on channel current is explained using quantization and tunneling concepts in terms of strong field dependence of the oxide layer single trap effective cross-section, which can be described by an amplification factor. Physical interpretation of this parameter deals with the amplification of the electron cross-section determined by both decreasing the critical field influence as a result of the minority carrier depletion and the potential barrier growth for electron capture. For the NW channel of n+-p-n+ FETs, the experimentally observed slope of τc equals (−1). On the contrary, for the case of p+-p-p+ Si FETs in the accumulation regime, the experimentally observed slope of τc equals (−2.8). It can be achieved when the amplification factor is about 12. Extraordinary high capture time slope values versus current are explained by the effective capture cross-section growth with decreasing electron concentration close to the nanowire-oxide interface.
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000190197 7001_ $$0P:(DE-Juel1)164241$$aZadorozhnyi, I.$$b1$$ufzj
000190197 7001_ $$0P:(DE-Juel1)128738$$aVitusevich, Svetlana$$b2$$eCorresponding Author$$ufzj
000190197 773__ $$0PERI:(DE-600)1476463-5$$a10.1063/1.4919816$$gVol. 117, no. 17, p. 174506 -$$n17$$p174506 -1-5$$tJournal of applied physics$$v117$$x1089-7550$$y2015
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