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@ARTICLE{Gasparyan:190197,
      author       = {Gasparyan, F. and Zadorozhnyi, I. and Vitusevich, Svetlana},
      title        = {{S}ingle trap in liquid gated nanowire {FET}s: {C}apture
                      time behavior as a function of current},
      journal      = {Journal of applied physics},
      volume       = {117},
      number       = {17},
      issn         = {1089-7550},
      address      = {Melville, NY},
      publisher    = {American Inst. of Physics},
      reportid     = {FZJ-2015-03123},
      pages        = {174506 -1-5},
      year         = {2015},
      abstract     = {The basic reason for enhanced electron capture time, τc ,
                      of the oxide single trap dependence on drain current in the
                      linear operation regime of p+-p-p+ silicon field effect
                      transistors (FETs) was established, using a
                      quantum-mechanical approach. A strong increase of τc slope
                      dependence on channel current is explained using
                      quantization and tunneling concepts in terms of strong field
                      dependence of the oxide layer single trap effective
                      cross-section, which can be described by an amplification
                      factor. Physical interpretation of this parameter deals with
                      the amplification of the electron cross-section determined
                      by both decreasing the critical field influence as a result
                      of the minority carrier depletion and the potential barrier
                      growth for electron capture. For the NW channel of n+-p-n+
                      FETs, the experimentally observed slope of τc equals
                      (−1). On the contrary, for the case of p+-p-p+ Si FETs in
                      the accumulation regime, the experimentally observed slope
                      of τc equals (−2.8). It can be achieved when the
                      amplification factor is about 12. Extraordinary high capture
                      time slope values versus current are explained by the
                      effective capture cross-section growth with decreasing
                      electron concentration close to the nanowire-oxide
                      interface.},
      cin          = {PGI-8 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-8-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {523 - Controlling Configuration-Based Phenomena (POF3-523)},
      pid          = {G:(DE-HGF)POF3-523},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000354984100603},
      doi          = {10.1063/1.4919816},
      url          = {https://juser.fz-juelich.de/record/190197},
}