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| Hauptseite > Publikationsdatenbank > Single trap in liquid gated nanowire FETs: Capture time behavior as a function of current > print |
| Hauptseite > Publikationsdatenbank > Single trap in liquid gated nanowire FETs: Capture time behavior as a function of current > print |
| 001 | 190197 | ||
| 005 | 20220930130042.0 | ||
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| 245 | _ | _ | |a Single trap in liquid gated nanowire FETs: Capture time behavior as a function of current |
| 260 | _ | _ | |a Melville, NY |c 2015 |b American Inst. of Physics |
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| 520 | _ | _ | |a The basic reason for enhanced electron capture time, τc , of the oxide single trap dependence on drain current in the linear operation regime of p+-p-p+ silicon field effect transistors (FETs) was established, using a quantum-mechanical approach. A strong increase of τc slope dependence on channel current is explained using quantization and tunneling concepts in terms of strong field dependence of the oxide layer single trap effective cross-section, which can be described by an amplification factor. Physical interpretation of this parameter deals with the amplification of the electron cross-section determined by both decreasing the critical field influence as a result of the minority carrier depletion and the potential barrier growth for electron capture. For the NW channel of n+-p-n+ FETs, the experimentally observed slope of τc equals (−1). On the contrary, for the case of p+-p-p+ Si FETs in the accumulation regime, the experimentally observed slope of τc equals (−2.8). It can be achieved when the amplification factor is about 12. Extraordinary high capture time slope values versus current are explained by the effective capture cross-section growth with decreasing electron concentration close to the nanowire-oxide interface. |
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| 773 | _ | _ | |a 10.1063/1.4919816 |g Vol. 117, no. 17, p. 174506 - |0 PERI:(DE-600)1476463-5 |n 17 |p 174506 -1-5 |t Journal of applied physics |v 117 |y 2015 |x 1089-7550 |
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