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@ARTICLE{Lambertz:190200,
      author       = {Lambertz, Andreas and Finger, Friedhelm and Schropp, Ruud
                      E. I. and Rau, Uwe and Smirnov, Vladimir},
      title        = {{P}reparation and measurement of highly efficient
                      a-{S}i:{H} single junction solar cells and the advantages of
                      μ c-{S}i{O} $_{x}$ :{H} n -layers},
      journal      = {Progress in photovoltaics},
      volume       = {23},
      number       = {8},
      issn         = {1062-7995},
      address      = {Chichester},
      publisher    = {Wiley},
      reportid     = {FZJ-2015-03125},
      pages        = {939–948},
      year         = {2015},
      abstract     = {Reducing the optical losses and increasing the reflection
                      while maintaining the function of doped layers at the back
                      contact in solar cells are important issues for many
                      photovoltaic applications. One approach is to use doped
                      microcrystalline silicon oxide (μc-SiOx:H) with lower
                      optical absorption in the spectral range of interest
                      (300 nm to 1100 nm). To investigate the advantages, we
                      applied the μc-SiOx:H n-layers to a-Si:H single junction
                      solar cells. We report on the comparison between amorphous
                      silicon (a-Si:H) single junction solar cells with either
                      μc-SiOx:H n-layers or non-alloyed silicon n-layers. The
                      origin of the improved performance of a-Si:H single junction
                      solar cells with the μc-SiOx:H n-layer is identified by
                      distinguishing the contributions because of the increased
                      transparency and the reduced refractive index of the
                      μc-SiOx:H material. The solar cell parameters of a-Si:H
                      solar cells with both types of n-layers were compared in the
                      initial state and after 1000 h of light soaking in a
                      series of solar cells with various absorber layer
                      thicknesses. The measurement procedure for the determination
                      of the solar cell performance is described in detail, and
                      the measurement accuracy is evaluated and discussed. For an
                      a-Si:H single junction solar cell with a μc-SiOx:H n-layer,
                      a stabilized efficiency of $10.3\%$ after 1000 h light
                      soaking is demonstrated.},
      cin          = {IEK-5},
      ddc          = {690},
      cid          = {I:(DE-Juel1)IEK-5-20101013},
      pnm          = {121 - Solar cells of the next generation (POF3-121) / FAST
                      TRACK - Accelerated development and prototyping of
                      nano-technology-based high-efficiency thin-film silicon
                      solar modules (283501)},
      pid          = {G:(DE-HGF)POF3-121 / G:(EU-Grant)283501},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000357792700001},
      doi          = {10.1002/pip.2629},
      url          = {https://juser.fz-juelich.de/record/190200},
}