%0 Journal Article
%A Adamo, C.
%A Méchin, L.
%A Heeg, T.
%A Katz, M.
%A Mercone, S.
%A Guillet, B.
%A Wu, S.
%A Routoure, J.-M.
%A Schubert, J.
%A Zander, W.
%A Misra, R.
%A Schiffer, P.
%A Pan, X. Q.
%A Schlom, D. G.
%T Enhanced electrical and magnetic properties in La0.7Sr0.3MnO3 thin films deposited on CaTiO3-buffered silicon substrates
%J APL materials
%V 3
%N 6
%@ 2166-532X
%C Melville, NY
%I AIP Publ.
%M FZJ-2015-03136
%P 062504
%D 2015
%X We investigate the suitability of an epitaxial CaTiO3 buffer layer deposited onto (100) Si by reactive molecular-beam epitaxy (MBE) for the epitaxial integration of the colossal magnetoresistive material La0.7Sr0.3MnO3 with silicon. The magnetic and electrical properties of La0.7Sr0.3MnO3 films deposited by MBE on CaTiO3-buffered silicon (CaTiO3/Si) are compared with those deposited on SrTiO3-buffered silicon (SrTiO3/Si). In addition to possessing a higher Curie temperature and a higher metal-to-insulator transition temperature, the electrical resistivity and 1/f noise level at 300 K are reduced by a factor of two in the heterostructure with the CaTiO3 buffer layer. These results are relevant to device applications of La0.7Sr0.3MnO3 thin films on silicon substrates.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000357608900015
%R 10.1063/1.4915486
%U https://juser.fz-juelich.de/record/190211