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000190211 1001_ $$0P:(DE-HGF)0$$aAdamo, C.$$b0
000190211 245__ $$aEnhanced electrical and magnetic properties in La0.7Sr0.3MnO3 thin films deposited on CaTiO3-buffered silicon substrates
000190211 260__ $$aMelville, NY$$bAIP Publ.$$c2015
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000190211 520__ $$aWe investigate the suitability of an epitaxial CaTiO3 buffer layer deposited onto (100) Si by reactive molecular-beam epitaxy (MBE) for the epitaxial integration of the colossal magnetoresistive material La0.7Sr0.3MnO3 with silicon. The magnetic and electrical properties of La0.7Sr0.3MnO3 films deposited by MBE on CaTiO3-buffered silicon (CaTiO3/Si) are compared with those deposited on SrTiO3-buffered silicon (SrTiO3/Si). In addition to possessing a higher Curie temperature and a higher metal-to-insulator transition temperature, the electrical resistivity and 1/f noise level at 300 K are reduced by a factor of two in the heterostructure with the CaTiO3 buffer layer. These results are relevant to device applications of La0.7Sr0.3MnO3 thin films on silicon substrates.
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000190211 7001_ $$0P:(DE-HGF)0$$aMéchin, L.$$b1
000190211 7001_ $$0P:(DE-HGF)0$$aHeeg, T.$$b2
000190211 7001_ $$0P:(DE-HGF)0$$aKatz, M.$$b3
000190211 7001_ $$0P:(DE-HGF)0$$aMercone, S.$$b4
000190211 7001_ $$0P:(DE-HGF)0$$aGuillet, B.$$b5
000190211 7001_ $$0P:(DE-HGF)0$$aWu, S.$$b6
000190211 7001_ $$0P:(DE-HGF)0$$aRoutoure, J.-M.$$b7
000190211 7001_ $$0P:(DE-Juel1)128631$$aSchubert, J.$$b8
000190211 7001_ $$0P:(DE-Juel1)128648$$aZander, W.$$b9
000190211 7001_ $$0P:(DE-HGF)0$$aMisra, R.$$b10
000190211 7001_ $$0P:(DE-HGF)0$$aSchiffer, P.$$b11
000190211 7001_ $$0P:(DE-HGF)0$$aPan, X. Q.$$b12
000190211 7001_ $$0P:(DE-HGF)0$$aSchlom, D. G.$$b13$$eCorresponding Author
000190211 773__ $$0PERI:(DE-600)2722985-3$$a10.1063/1.4915486$$gVol. 3, no. 6, p. 062504 -$$n6$$p062504$$tAPL materials$$v3$$x2166-532X$$y2015
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