TY  - JOUR
AU  - Adamo, C.
AU  - Méchin, L.
AU  - Heeg, T.
AU  - Katz, M.
AU  - Mercone, S.
AU  - Guillet, B.
AU  - Wu, S.
AU  - Routoure, J.-M.
AU  - Schubert, J.
AU  - Zander, W.
AU  - Misra, R.
AU  - Schiffer, P.
AU  - Pan, X. Q.
AU  - Schlom, D. G.
TI  - Enhanced electrical and magnetic properties in La0.7Sr0.3MnO3 thin films deposited on CaTiO3-buffered silicon substrates
JO  - APL materials
VL  - 3
IS  - 6
SN  - 2166-532X
CY  - Melville, NY
PB  - AIP Publ.
M1  - FZJ-2015-03136
SP  - 062504
PY  - 2015
AB  - We investigate the suitability of an epitaxial CaTiO3 buffer layer deposited onto (100) Si by reactive molecular-beam epitaxy (MBE) for the epitaxial integration of the colossal magnetoresistive material La0.7Sr0.3MnO3 with silicon. The magnetic and electrical properties of La0.7Sr0.3MnO3 films deposited by MBE on CaTiO3-buffered silicon (CaTiO3/Si) are compared with those deposited on SrTiO3-buffered silicon (SrTiO3/Si). In addition to possessing a higher Curie temperature and a higher metal-to-insulator transition temperature, the electrical resistivity and 1/f noise level at 300 K are reduced by a factor of two in the heterostructure with the CaTiO3 buffer layer. These results are relevant to device applications of La0.7Sr0.3MnO3 thin films on silicon substrates.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000357608900015
DO  - DOI:10.1063/1.4915486
UR  - https://juser.fz-juelich.de/record/190211
ER  -