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@ARTICLE{Adamo:190211,
      author       = {Adamo, C. and Méchin, L. and Heeg, T. and Katz, M. and
                      Mercone, S. and Guillet, B. and Wu, S. and Routoure, J.-M.
                      and Schubert, J. and Zander, W. and Misra, R. and Schiffer,
                      P. and Pan, X. Q. and Schlom, D. G.},
      title        = {{E}nhanced electrical and magnetic properties in
                      {L}a0.7{S}r0.3{M}n{O}3 thin films deposited on
                      {C}a{T}i{O}3-buffered silicon substrates},
      journal      = {APL materials},
      volume       = {3},
      number       = {6},
      issn         = {2166-532X},
      address      = {Melville, NY},
      publisher    = {AIP Publ.},
      reportid     = {FZJ-2015-03136},
      pages        = {062504},
      year         = {2015},
      abstract     = {We investigate the suitability of an epitaxial CaTiO3
                      buffer layer deposited onto (100) Si by reactive
                      molecular-beam epitaxy (MBE) for the epitaxial integration
                      of the colossal magnetoresistive material La0.7Sr0.3MnO3
                      with silicon. The magnetic and electrical properties of
                      La0.7Sr0.3MnO3 films deposited by MBE on CaTiO3-buffered
                      silicon (CaTiO3/Si) are compared with those deposited on
                      SrTiO3-buffered silicon (SrTiO3/Si). In addition to
                      possessing a higher Curie temperature and a higher
                      metal-to-insulator transition temperature, the electrical
                      resistivity and 1/f noise level at 300 K are reduced by a
                      factor of two in the heterostructure with the CaTiO3 buffer
                      layer. These results are relevant to device applications of
                      La0.7Sr0.3MnO3 thin films on silicon substrates.},
      cin          = {PGI-9 / JARA-FIT},
      ddc          = {620},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000357608900015},
      doi          = {10.1063/1.4915486},
      url          = {https://juser.fz-juelich.de/record/190211},
}