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| Home > Publications database > Enhanced electrical and magnetic properties in La0.7Sr0.3MnO3 thin films deposited on CaTiO3-buffered silicon substrates > print |
| 001 | 190211 | ||
| 005 | 20210129215534.0 | ||
| 024 | 7 | _ | |2 doi |a 10.1063/1.4915486 |
| 024 | 7 | _ | |2 WOS |a WOS:000357608900015 |
| 037 | _ | _ | |a FZJ-2015-03136 |
| 082 | _ | _ | |a 620 |
| 100 | 1 | _ | |0 P:(DE-HGF)0 |a Adamo, C. |b 0 |
| 245 | _ | _ | |a Enhanced electrical and magnetic properties in La0.7Sr0.3MnO3 thin films deposited on CaTiO3-buffered silicon substrates |
| 260 | _ | _ | |a Melville, NY |b AIP Publ. |c 2015 |
| 336 | 7 | _ | |0 PUB:(DE-HGF)16 |2 PUB:(DE-HGF) |a Journal Article |b journal |m journal |s 1431516499_3597 |
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| 520 | _ | _ | |a We investigate the suitability of an epitaxial CaTiO3 buffer layer deposited onto (100) Si by reactive molecular-beam epitaxy (MBE) for the epitaxial integration of the colossal magnetoresistive material La0.7Sr0.3MnO3 with silicon. The magnetic and electrical properties of La0.7Sr0.3MnO3 films deposited by MBE on CaTiO3-buffered silicon (CaTiO3/Si) are compared with those deposited on SrTiO3-buffered silicon (SrTiO3/Si). In addition to possessing a higher Curie temperature and a higher metal-to-insulator transition temperature, the electrical resistivity and 1/f noise level at 300 K are reduced by a factor of two in the heterostructure with the CaTiO3 buffer layer. These results are relevant to device applications of La0.7Sr0.3MnO3 thin films on silicon substrates. |
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| 700 | 1 | _ | |0 P:(DE-HGF)0 |a Méchin, L. |b 1 |
| 700 | 1 | _ | |0 P:(DE-HGF)0 |a Heeg, T. |b 2 |
| 700 | 1 | _ | |0 P:(DE-HGF)0 |a Katz, M. |b 3 |
| 700 | 1 | _ | |0 P:(DE-HGF)0 |a Mercone, S. |b 4 |
| 700 | 1 | _ | |0 P:(DE-HGF)0 |a Guillet, B. |b 5 |
| 700 | 1 | _ | |0 P:(DE-HGF)0 |a Wu, S. |b 6 |
| 700 | 1 | _ | |0 P:(DE-HGF)0 |a Routoure, J.-M. |b 7 |
| 700 | 1 | _ | |0 P:(DE-Juel1)128631 |a Schubert, J. |b 8 |
| 700 | 1 | _ | |0 P:(DE-Juel1)128648 |a Zander, W. |b 9 |
| 700 | 1 | _ | |0 P:(DE-HGF)0 |a Misra, R. |b 10 |
| 700 | 1 | _ | |0 P:(DE-HGF)0 |a Schiffer, P. |b 11 |
| 700 | 1 | _ | |0 P:(DE-HGF)0 |a Pan, X. Q. |b 12 |
| 700 | 1 | _ | |0 P:(DE-HGF)0 |a Schlom, D. G. |b 13 |e Corresponding Author |
| 773 | _ | _ | |0 PERI:(DE-600)2722985-3 |a 10.1063/1.4915486 |g Vol. 3, no. 6, p. 062504 - |n 6 |p 062504 |t APL materials |v 3 |x 2166-532X |y 2015 |
| 856 | 4 | _ | |u http://scitation.aip.org/content/aip/journal/aplmater/3/6/10.1063/1.4915486 |
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