TY  - JOUR
AU  - Pavunny, S.P.
AU  - Thomas, R.
AU  - Murari, N.M.
AU  - Schubert, J.
AU  - Mussmann, V.
AU  - Luptak, R.
AU  - Kalkur, T.S.
AU  - Katiyar, R.S.
TI  - Structural and Electrical Properties of Lanthanum Gadolinium Oxide: Ceramic and Thin Films for High-k Application
JO  - Integrated ferroelectrics
VL  - 125
SN  - 1058-4587
CY  - London [u.a.]
PB  - Taylor & Francis
M1  - PreJuSER-19172
SP  - 44 - 52
PY  - 2011
N1  - Financial support from National Science Foundation under the Grant NSF-RII-0701525 is gratefully acknowledged. One of the authors (S. P. Pavunny) is grateful to the NSF-IFN for the doctoral fellowship.
AB  - LaGdO3 (LGO) ceramics and thin films were prepared for high-k applications. Electrical properties of LGO ceramics were studied as a function of temperature and frequency using metal-insulator-metal (MIM) capacitor configuration. The dielectric constant and loss tangent at 100 kHz were 20 and 0.004 respectively at ambient conditions without any temperature and voltage dependence. Bulk properties are encouraging for high-k gate-oxide applications. Thin films of LGO were prepared on Si substrates by pulsed laser deposition. The electrical properties of thin films were investigated with metal-insulator-semiconductor (MIS) capacitors. The relative dielectric permittivity was 21.6 +/- 1.7 and the equivalent oxide thickness was controlled by the SiOx interlayer. However, compared to the standard SiO2 capacitors of similar equivalent oxide thickness, less leakage currents were obtained. By controlling the interlayer growth between the high-k and silicon, EOT can be reduced further to meet the requirements of 22 nm technology node with lower leakage current utilizing this material.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000297009300007
DO  - DOI:10.1080/10584587.2011.574039
UR  - https://juser.fz-juelich.de/record/19172
ER  -