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000019474 0247_ $$2DOI$$a10.1007/s003390101059
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000019474 084__ $$2WoS$$aMaterials Science, Multidisciplinary
000019474 084__ $$2WoS$$aPhysics, Applied
000019474 1001_ $$0P:(DE-Juel1)VDB5012$$aEbert, P.$$b0$$uFZJ
000019474 245__ $$aDefects in III-V semiconductor surfaces
000019474 260__ $$aMelville, NY$$bAmerican Institute of Physics$$c2002
000019474 300__ $$a101 - 112
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000019474 440_0 $$0562$$aApplied Physics Letters$$vA 75$$x0003-6951
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000019474 520__ $$aThis work reports the measurement of the nanoscale physical properties of surface vacancies and the extraction of the types and concentrations of dopant atoms and point defects inside compound semiconductors, primarily by cross-sectional scanning tunneling microscopy on cleavage surfaces of III-V semiconductors. The results provide the basis to determine the physical mechanisms governing the interactions, the formation, the electronic properties, and the compensation effects of surface as well as bulk point defects and dopant atoms.
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