TY  - JOUR
AU  - Ebert, P.
TI  - Defects in III-V semiconductor surfaces
JO  - Applied physics letters
VL  - 75
SN  - 0003-6951
CY  - Melville, NY
PB  - American Institute of Physics
M1  - PreJuSER-19474
SP  - 101 - 112
PY  - 2002
N1  - Record converted from VDB: 12.11.2012
AB  - This work reports the measurement of the nanoscale physical properties of surface vacancies and the extraction of the types and concentrations of dopant atoms and point defects inside compound semiconductors, primarily by cross-sectional scanning tunneling microscopy on cleavage surfaces of III-V semiconductors. The results provide the basis to determine the physical mechanisms governing the interactions, the formation, the electronic properties, and the compensation effects of surface as well as bulk point defects and dopant atoms.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000175356400011
DO  - DOI:10.1007/s003390101059
UR  - https://juser.fz-juelich.de/record/19474
ER  -