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@ARTICLE{Ebert:19474,
      author       = {Ebert, P.},
      title        = {{D}efects in {III}-{V} semiconductor surfaces},
      journal      = {Applied physics letters},
      volume       = {75},
      issn         = {0003-6951},
      address      = {Melville, NY},
      publisher    = {American Institute of Physics},
      reportid     = {PreJuSER-19474},
      pages        = {101 - 112},
      year         = {2002},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {This work reports the measurement of the nanoscale physical
                      properties of surface vacancies and the extraction of the
                      types and concentrations of dopant atoms and point defects
                      inside compound semiconductors, primarily by cross-sectional
                      scanning tunneling microscopy on cleavage surfaces of III-V
                      semiconductors. The results provide the basis to determine
                      the physical mechanisms governing the interactions, the
                      formation, the electronic properties, and the compensation
                      effects of surface as well as bulk point defects and dopant
                      atoms.},
      keywords     = {J (WoSType)},
      cin          = {IFF-IMF},
      ddc          = {530},
      cid          = {I:(DE-Juel1)VDB37},
      pnm          = {Kondensierte Materie},
      pid          = {G:(DE-Juel1)FUEK242},
      shelfmark    = {Materials Science, Multidisciplinary / Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000175356400011},
      doi          = {10.1007/s003390101059},
      url          = {https://juser.fz-juelich.de/record/19474},
}