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017 _ _ |a This version is available at the following Publisher URL: http://apl.aip.org
024 7 _ |a 10.1007/s003390101059
|2 DOI
024 7 _ |a WOS:000175356400011
|2 WOS
024 7 _ |a 2128/1045
|2 Handle
024 7 _ |a altmetric:21807437
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037 _ _ |a PreJuSER-19474
041 _ _ |a eng
082 _ _ |a 530
084 _ _ |2 WoS
|a Materials Science, Multidisciplinary
084 _ _ |2 WoS
|a Physics, Applied
100 1 _ |a Ebert, P.
|b 0
|u FZJ
|0 P:(DE-Juel1)VDB5012
245 _ _ |a Defects in III-V semiconductor surfaces
260 _ _ |a Melville, NY
|b American Institute of Physics
|c 2002
300 _ _ |a 101 - 112
336 7 _ |a Journal Article
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336 7 _ |a article
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440 _ 0 |a Applied Physics Letters
|x 0003-6951
|0 562
|v A 75
500 _ _ |a Record converted from VDB: 12.11.2012
520 _ _ |a This work reports the measurement of the nanoscale physical properties of surface vacancies and the extraction of the types and concentrations of dopant atoms and point defects inside compound semiconductors, primarily by cross-sectional scanning tunneling microscopy on cleavage surfaces of III-V semiconductors. The results provide the basis to determine the physical mechanisms governing the interactions, the formation, the electronic properties, and the compensation effects of surface as well as bulk point defects and dopant atoms.
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773 _ _ |a 10.1007/s003390101059
|g Vol. 75, p. 101 - 112
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|0 PERI:(DE-600)1469436-0
|t Applied physics letters
|v 75
|y 2002
|x 0003-6951
856 4 _ |u https://juser.fz-juelich.de/record/19474/files/13432.pdf
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920 1 _ |k IFF-IMF
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