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000019583 084__ $$2WoS$$aPhysics, Applied
000019583 1001_ $$0P:(DE-HGF)0$$aFujii, H.$$b0
000019583 245__ $$aInterstitial Donor Codoping Method in (Ga,Mn)As to Increase Solubility of Mn and Curie Temperature
000019583 260__ $$aTokyo$$b¯Oy¯o Butsuri-Gakkai$$c2011
000019583 300__ $$a043003
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000019583 440_0 $$024061$$aApplied Physics Express$$v4$$x1882-0778$$y4
000019583 500__ $$3POF3_Assignment on 2016-02-29
000019583 500__ $$aThe authors would like to express their gratitude for the financial support from a Grant-in-Aid for Scientific Research for young researchers and on Innovative Areas "Materials Design through Computics: Complex Correlation and Non-Equilibrium Dynamics", a Global Center of Excellence program "Core Research and Engineering of Advanced Materials-Interdisciplinary Education Center for Materials Science", and the Japan Science and Technology Agency Strategic Japanese-German Cooperative Program "Computational design and evaluation of spintronics materials".
000019583 520__ $$aBased on first principles calculations, we propose a solubility control method of magnetic impurities in dilute magnetic semiconductors (DMSs). The low solubility of Mn in (Ga, Mn)As is experimentally and theoretically known. We show that donor atoms, such as Li, introduced at the interstitial sites in GaAs enhance the solubility of Mn. As a result, Mn can be doped to more than 20% in GaAs in the thermal equilibrium condition. The same effect can be seen when we dope Mn in GaAs with other interstitial donors, such as H, Na, K, Be, Mg, Ca, Cu, and Ag. (C) 2011 The Japan Society of Applied Physics
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000019583 7001_ $$0P:(DE-HGF)0$$aSato, K.$$b1
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000019583 7001_ $$0P:(DE-Juel1)130612$$aDederichs, P.H.$$b3$$uFZJ
000019583 7001_ $$0P:(DE-HGF)0$$aKatayama-Yoshida, H.$$b4
000019583 773__ $$0PERI:(DE-600)2417569-9$$a10.1143/APEX.4.043003$$gVol. 4, p. 043003$$p043003$$q4<043003$$tApplied physics express$$v4$$x1882-0778$$y2011
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