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@ARTICLE{Fujii:19583,
      author       = {Fujii, H. and Sato, K. and Bergqvist, L. and Dederichs,
                      P.H. and Katayama-Yoshida, H.},
      title        = {{I}nterstitial {D}onor {C}odoping {M}ethod in
                      ({G}a,{M}n){A}s to {I}ncrease {S}olubility of {M}n and
                      {C}urie {T}emperature},
      journal      = {Applied physics express},
      volume       = {4},
      issn         = {1882-0778},
      address      = {Tokyo},
      publisher    = {¯Oy¯o Butsuri-Gakkai},
      reportid     = {PreJuSER-19583},
      pages        = {043003},
      year         = {2011},
      note         = {The authors would like to express their gratitude for the
                      financial support from a Grant-in-Aid for Scientific
                      Research for young researchers and on Innovative Areas
                      "Materials Design through Computics: Complex Correlation and
                      Non-Equilibrium Dynamics", a Global Center of Excellence
                      program "Core Research and Engineering of Advanced
                      Materials-Interdisciplinary Education Center for Materials
                      Science", and the Japan Science and Technology Agency
                      Strategic Japanese-German Cooperative Program "Computational
                      design and evaluation of spintronics materials".},
      abstract     = {Based on first principles calculations, we propose a
                      solubility control method of magnetic impurities in dilute
                      magnetic semiconductors (DMSs). The low solubility of Mn in
                      (Ga, Mn)As is experimentally and theoretically known. We
                      show that donor atoms, such as Li, introduced at the
                      interstitial sites in GaAs enhance the solubility of Mn. As
                      a result, Mn can be doped to more than $20\%$ in GaAs in the
                      thermal equilibrium condition. The same effect can be seen
                      when we dope Mn in GaAs with other interstitial donors, such
                      as H, Na, K, Be, Mg, Ca, Cu, and Ag. (C) 2011 The Japan
                      Society of Applied Physics},
      keywords     = {J (WoSType)},
      cin          = {PGI-2},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-2-20110106},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000289344800012},
      doi          = {10.1143/APEX.4.043003},
      url          = {https://juser.fz-juelich.de/record/19583},
}