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@ARTICLE{Fujii:19583,
author = {Fujii, H. and Sato, K. and Bergqvist, L. and Dederichs,
P.H. and Katayama-Yoshida, H.},
title = {{I}nterstitial {D}onor {C}odoping {M}ethod in
({G}a,{M}n){A}s to {I}ncrease {S}olubility of {M}n and
{C}urie {T}emperature},
journal = {Applied physics express},
volume = {4},
issn = {1882-0778},
address = {Tokyo},
publisher = {¯Oy¯o Butsuri-Gakkai},
reportid = {PreJuSER-19583},
pages = {043003},
year = {2011},
note = {The authors would like to express their gratitude for the
financial support from a Grant-in-Aid for Scientific
Research for young researchers and on Innovative Areas
"Materials Design through Computics: Complex Correlation and
Non-Equilibrium Dynamics", a Global Center of Excellence
program "Core Research and Engineering of Advanced
Materials-Interdisciplinary Education Center for Materials
Science", and the Japan Science and Technology Agency
Strategic Japanese-German Cooperative Program "Computational
design and evaluation of spintronics materials".},
abstract = {Based on first principles calculations, we propose a
solubility control method of magnetic impurities in dilute
magnetic semiconductors (DMSs). The low solubility of Mn in
(Ga, Mn)As is experimentally and theoretically known. We
show that donor atoms, such as Li, introduced at the
interstitial sites in GaAs enhance the solubility of Mn. As
a result, Mn can be doped to more than $20\%$ in GaAs in the
thermal equilibrium condition. The same effect can be seen
when we dope Mn in GaAs with other interstitial donors, such
as H, Na, K, Be, Mg, Ca, Cu, and Ag. (C) 2011 The Japan
Society of Applied Physics},
keywords = {J (WoSType)},
cin = {PGI-2},
ddc = {530},
cid = {I:(DE-Juel1)PGI-2-20110106},
pnm = {Grundlagen für zukünftige Informationstechnologien},
pid = {G:(DE-Juel1)FUEK412},
shelfmark = {Physics, Applied},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000289344800012},
doi = {10.1143/APEX.4.043003},
url = {https://juser.fz-juelich.de/record/19583},
}