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@ARTICLE{Bergqvist:19584,
      author       = {Bergqvist, L. and Sato, K. and Katayama-Yoshida, H. and
                      Dederichs, P.H.},
      title        = {{C}omputational materials design for high-{T}(c)
                      ({G}a,{M}n){A}s with {L}i codoping},
      journal      = {Physical review / B},
      volume       = {83},
      number       = {16},
      issn         = {1098-0121},
      address      = {College Park, Md.},
      publisher    = {APS},
      reportid     = {PreJuSER-19584},
      pages        = {165201},
      year         = {2011},
      note         = {L.B. acknowledges financial support from the European
                      Commission within the Marie Curie Actions under Contract No.
                      PERG-GA-2008-239411. K.S. and H.K.-Y. acknowledge the
                      financial support from the Grant-in-Aid for Scientific
                      Research for young researchers and on Innovative Areas
                      "Materials Design through Computics: Complex Correlation and
                      Non-Equilibrium Dynamics," the Global COE Program "Core
                      Research and Engineering of Advanced
                      Materials-Interdisciplinary Education Center for Materials
                      Science," and Strategic Japanese-German Cooperative Program
                      "Computational design and evaluation of spintronics
                      materials," JST.},
      abstract     = {Based on first-principles calculations and kinetic Monte
                      Carlo simulations, we design a realistic and practical
                      codoping technique for increasing the concentration of Mn
                      atoms in GaAs and realizing high Curie temperatures in (Ga,
                      Mn) As. We found that using codoping of Li interstitial
                      atoms during the crystal growth has two great advantages.
                      First, due to lower formation energy of Li interstitials
                      compared to Mn interstitials, Li prevents formation of
                      unwanted Mn interstitials. Second, Li interstitials can be
                      removed by using post-growth annealing at low temperatures.
                      This codoping method offers a general strategy to go far
                      beyond the solubility limit and it should be applicable also
                      to other diluted magnetic semiconductor systems.},
      keywords     = {J (WoSType)},
      cin          = {PGI-2},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-2-20110106},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Physics, Condensed Matter},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000289229600003},
      doi          = {10.1103/PhysRevB.83.165201},
      url          = {https://juser.fz-juelich.de/record/19584},
}