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001     19589
005     20200423203138.0
024 7 _ |2 DOI
|a 10.1103/PhysRevLett.106.094502
024 7 _ |2 WOS
|a WOS:000287913400008
024 7 _ |2 Handle
|a 2128/7394
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041 _ _ |a eng
082 _ _ |a 550
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|a Physics, Multidisciplinary
100 1 _ |0 P:(DE-HGF)0
|a Volokitin, A. I.
|b 0
245 _ _ |a Quantum Friction
260 _ _ |a College Park, Md.
|b APS
|c 2011
300 _ _ |a 094502
336 7 _ |a Journal Article
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440 _ 0 |0 4925
|a Physical Review Letters
|v 106
|x 0031-9007
|y 9
500 _ _ |3 POF3_Assignment on 2016-02-29
500 _ _ |a A. I. V. acknowledges financial support from the Russian Foundation for Basic Research (Grant No. 100200297a) and ESF within activity "New Trends and Applications of the Casimir Effect".
520 _ _ |a We investigate the van der Waals friction between graphene and an amorphous SiO2 substrate. We find that due to this friction the electric current is saturated at a high electric field, in agreement with experiment. The saturation current depends weakly on the temperature, which we attribute to the quantum friction between the graphene carriers and the substrate optical phonons. We calculate also the frictional drag between two graphene sheets caused by van der Waals friction, and find that this drag can induce a voltage high enough to be easily measured experimentally.
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|a Persson, B.N.J.
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856 7 _ |u http://dx.doi.org/10.1103/PhysRevLett.106.094502
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