%0 Journal Article
%A Posseik, Francois
%A Ksari, Y.
%A Giovanelli, L.
%A Porte, L.
%A Themlin, J.-M.
%T High-temperature desorption of C60 covalently bound to 6H-SiC(0001)-(3x3)
%J Physical review / B
%V 84
%N 7
%@ 1098-0121
%C College Park, Md.
%I APS
%M PreJuSER-19654
%P 075333
%D 2011
%Z This work is supported by the ANR PNANO project MolSIC (ANR-08-P058-36).
%X The desorption or fragmentation temperature of C-60 bound to Si-rich-(3 x 3) and (root 3 x root 3) R30 degrees. reconstructions of 6H-SiC(0001) is investigated using inverse photoemission spectroscopy (IPES) and LEED experiments. On SiC-(3 x 3), C-60 film is found desorbed after annealing at a high temperature of 1140 K, supporting covalent bonding. Meanwhile, the Si tetramers of the (3 x 3) nanostructured substrate are recovered, as can be inferred from the full reappearance of the Mott-Hubbard surface state in the IPE spectra. SiC-(3 x 3) behaves in a singular way among the other semiconducting substrates, which covalently bind to C-60. This remarkable feature is attributed to the low density of Si dangling bonds and to the highly corrugated character of this reconstruction.
%K J (WoSType)
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000293918600005
%R 10.1103/PhysRevB.84.075333
%U https://juser.fz-juelich.de/record/19654