TY  - JOUR
AU  - Posseik, Francois
AU  - Ksari, Y.
AU  - Giovanelli, L.
AU  - Porte, L.
AU  - Themlin, J.-M.
TI  - High-temperature desorption of C60 covalently bound to 6H-SiC(0001)-(3x3)
JO  - Physical review / B
VL  - 84
IS  - 7
SN  - 1098-0121
CY  - College Park, Md.
PB  - APS
M1  - PreJuSER-19654
SP  - 075333
PY  - 2011
N1  - This work is supported by the ANR PNANO project MolSIC (ANR-08-P058-36).
AB  - The desorption or fragmentation temperature of C-60 bound to Si-rich-(3 x 3) and (root 3 x root 3) R30 degrees. reconstructions of 6H-SiC(0001) is investigated using inverse photoemission spectroscopy (IPES) and LEED experiments. On SiC-(3 x 3), C-60 film is found desorbed after annealing at a high temperature of 1140 K, supporting covalent bonding. Meanwhile, the Si tetramers of the (3 x 3) nanostructured substrate are recovered, as can be inferred from the full reappearance of the Mott-Hubbard surface state in the IPE spectra. SiC-(3 x 3) behaves in a singular way among the other semiconducting substrates, which covalently bind to C-60. This remarkable feature is attributed to the low density of Si dangling bonds and to the highly corrugated character of this reconstruction.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000293918600005
DO  - DOI:10.1103/PhysRevB.84.075333
UR  - https://juser.fz-juelich.de/record/19654
ER  -