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| Hauptseite > Publikationsdatenbank > High-temperature desorption of C60 covalently bound to 6H-SiC(0001)-(3x3) > print |
| Hauptseite > Publikationsdatenbank > High-temperature desorption of C60 covalently bound to 6H-SiC(0001)-(3x3) > print |
| 001 | 19654 | ||
| 005 | 20230426083032.0 | ||
| 024 | 7 | _ | |2 DOI |a 10.1103/PhysRevB.84.075333 |
| 024 | 7 | _ | |2 WOS |a WOS:000293918600005 |
| 024 | 7 | _ | |2 Handle |a 2128/10884 |
| 037 | _ | _ | |a PreJuSER-19654 |
| 041 | _ | _ | |a eng |
| 082 | _ | _ | |a 530 |
| 084 | _ | _ | |2 WoS |a Physics, Condensed Matter |
| 100 | 1 | _ | |0 P:(DE-Juel1)167128 |a Posseik, Francois |b 0 |u FZJ |
| 245 | _ | _ | |a High-temperature desorption of C60 covalently bound to 6H-SiC(0001)-(3x3) |
| 260 | _ | _ | |a College Park, Md. |b APS |c 2011 |
| 300 | _ | _ | |a 075333 |
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| 336 | 7 | _ | |2 BibTeX |a ARTICLE |
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| 440 | _ | 0 | |0 4919 |a Physical Review B |v 84 |x 1098-0121 |y 7 |
| 500 | _ | _ | |3 POF3_Assignment on 2016-02-29 |
| 500 | _ | _ | |a This work is supported by the ANR PNANO project MolSIC (ANR-08-P058-36). |
| 520 | _ | _ | |a The desorption or fragmentation temperature of C-60 bound to Si-rich-(3 x 3) and (root 3 x root 3) R30 degrees. reconstructions of 6H-SiC(0001) is investigated using inverse photoemission spectroscopy (IPES) and LEED experiments. On SiC-(3 x 3), C-60 film is found desorbed after annealing at a high temperature of 1140 K, supporting covalent bonding. Meanwhile, the Si tetramers of the (3 x 3) nanostructured substrate are recovered, as can be inferred from the full reappearance of the Mott-Hubbard surface state in the IPE spectra. SiC-(3 x 3) behaves in a singular way among the other semiconducting substrates, which covalently bind to C-60. This remarkable feature is attributed to the low density of Si dangling bonds and to the highly corrugated character of this reconstruction. |
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| 700 | 1 | _ | |0 P:(DE-HGF)0 |a Ksari, Y. |b 1 |
| 700 | 1 | _ | |0 P:(DE-HGF)0 |a Giovanelli, L. |b 2 |
| 700 | 1 | _ | |0 P:(DE-HGF)0 |a Porte, L. |b 3 |
| 700 | 1 | _ | |0 P:(DE-HGF)0 |a Themlin, J.-M. |b 4 |
| 773 | 1 | 8 | |a 10.1103/physrevb.84.075333 |b American Physical Society (APS) |d 2011-08-16 |n 7 |p 075333 |3 journal-article |2 Crossref |t Physical Review B |v 84 |y 2011 |x 1098-0121 |
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| 856 | 7 | _ | |u http://dx.doi.org/10.1103/PhysRevB.84.075333 |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/19654/files/PhysRevB.84.075333.pdf |y OpenAccess |
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