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@ARTICLE{Costi:19735,
      author       = {Costi, T.A. and Zlatic, V.},
      title        = {{C}harge {K}ondo anomalies in {P}b{T}e doped with {T}l
                      impurities},
      journal      = {Physical review letters},
      volume       = {108},
      issn         = {0031-9007},
      address      = {College Park, Md.},
      publisher    = {APS},
      reportid     = {PreJuSER-19735},
      pages        = {036402},
      year         = {2012},
      note         = {We thank K. M. Seemann, D. J. Singh, H. Murakami, P.
                      Coleman, G. Kotliar, and I. R. Fisher for discussions and D.
                      J. Singh, H. Murakami, and I. R. Fisher for data [8,22]. V.
                      Z. acknowledges support by Croatian MZOS Grant No.
                      0035-0352843-2849, NSF Grant No. DMR-1006605, and
                      Forschungszentrum Julich. T. A. C. acknowledges
                      supercomputer support from the John von Neumann Institute
                      for Computing (Julich).},
      abstract     = {We investigate the properties of PbTe doped with a small
                      concentration x of Tl impurities acting as acceptors and
                      described by Anderson impurities with negative onsite
                      correlation energy. We use the numerical renormalization
                      group method to show that the resulting charge Kondo effect
                      naturally accounts for the unusual low temperature and
                      doping dependence of normal state properties, including the
                      self-compensation effect in the carrier density and the
                      nonmagnetic Kondo anomaly in the resistivity. These are
                      found to be in good qualitative agreement with experiment.
                      Our results for the Tl s-electron spectral function provide
                      a new interpretation of point contact data.},
      keywords     = {J (WoSType)},
      cin          = {PGI-2 / IAS-3},
      ddc          = {550},
      cid          = {I:(DE-Juel1)PGI-2-20110106 / I:(DE-Juel1)IAS-3-20090406},
      pnm          = {421 - Frontiers of charge based Electronics (POF2-421) /
                      Grundlagen für zukünftige Informationstechnologien
                      (FUEK412)},
      pid          = {G:(DE-HGF)POF2-421 / G:(DE-Juel1)FUEK412},
      shelfmark    = {Physics, Multidisciplinary},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000299328500019},
      doi          = {10.1103/PhysRevLett.108.036402},
      url          = {https://juser.fz-juelich.de/record/19735},
}