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000019931 084__ $$2WoS$$aChemistry, Physical
000019931 084__ $$2WoS$$aPhysics, Atomic, Molecular & Chemical
000019931 1001_ $$0P:(DE-Juel1)130252$$aHüpkes, J.$$b0$$uFZJ
000019931 245__ $$aChemical Etching of Zinc Oxide for Thin-Film Silicon Solar Cells
000019931 260__ $$aWeinheim$$bWiley-VCH Verl.$$c2012
000019931 29510 $$aChemPhysChem 2012, 13, 66 – 73
000019931 300__ $$a66 - 73
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000019931 500__ $$aThe authors thank G. Wittstock and N. Jacobs (University of Oldenburg, Germany) for their kind assistance with the waterless etching experiments. We are deeply indebted to all former and current coworkers and colleagues who have been involved in joint experiments and discussions concerning the etching behavior of ZnO. The presented model would not exist without their invaluable contributions. Ongoing financial support by the German Federal Environment Ministry (BMU, grants 0327693 A and 0325299 A) and by the Deutsche Forschungsgemeinschaft (DFG, grant PU 447/1-1) is gratefully acknowledged.
000019931 520__ $$aChemical etching is widely applied to texture the surface of sputter-deposited zinc oxide for light scattering in thin-film silicon solar cells. Based on experimental findings from the literature and our own results we propose a model that explains the etching behavior of ZnO depending on the structural material properties and etching agent. All grain boundaries are prone to be etched to a certain threshold, that is defined by the deposition conditions and etching solution. Additionally, several approaches to modify the etching behavior through special preparation and etching steps are provided.
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Co. KGaA, Weinheim"
http://dx.doi.org/10.1002/cphc.201100738
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000019931 65320 $$2Author$$aelectrochemistry
000019931 65320 $$2Author$$aetching
000019931 65320 $$2Author$$ainterfaces
000019931 65320 $$2Author$$asolar cells
000019931 65320 $$2Author$$azinc oxide
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000019931 7001_ $$0P:(DE-Juel1)VDB91583$$aOwen, J. I.$$b1$$uFZJ
000019931 7001_ $$0P:(DE-Juel1)138216$$aPust, S. E.$$b2$$uFZJ
000019931 7001_ $$0P:(DE-Juel1)156447$$aBunte, E.$$b3$$uFZJ
000019931 773__ $$0PERI:(DE-600)2025223-7$$a10.1002/cphc.201100738$$gVol. 13, p. 66 - 73$$p66 - 73$$q13<66 - 73$$tChemPhysChem$$v13$$y2012
000019931 8567_ $$uhttp://dx.doi.org/10.1002/cphc.201100738
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