TY  - JOUR
AU  - Hüpkes, J.
AU  - Owen, J. I.
AU  - Pust, S. E.
AU  - Bunte, E.
TI  - Chemical Etching of Zinc Oxide for Thin-Film Silicon Solar Cells
JO  - ChemPhysChem
VL  - 13
CY  - Weinheim
PB  - Wiley-VCH Verl.
M1  - PreJuSER-19931
SP  - 66 - 73
PY  - 2012
N1  - Record converted from JUWEL: 18.07.2013
AB  - Chemical etching is widely applied to texture the surface of sputter-deposited zinc oxide for light scattering in thin-film silicon solar cells. Based on experimental findings from the literature and our own results we propose a model that explains the etching behavior of ZnO depending on the structural material properties and etching agent. All grain boundaries are prone to be etched to a certain threshold, that is defined by the deposition conditions and etching solution. Additionally, several approaches to modify the etching behavior through special preparation and etching steps are provided.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
C6  - pmid:22162035
UR  - <Go to ISI:>//WOS:000298913500007
DO  - DOI:10.1002/cphc.201100738
UR  - https://juser.fz-juelich.de/record/19931
ER  -