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@ARTICLE{Hpkes:19931,
author = {Hüpkes, J. and Owen, J. I. and Pust, S. E. and Bunte, E.},
title = {{C}hemical {E}tching of {Z}inc {O}xide for {T}hin-{F}ilm
{S}ilicon {S}olar {C}ells},
journal = {ChemPhysChem},
volume = {13},
address = {Weinheim},
publisher = {Wiley-VCH Verl.},
reportid = {PreJuSER-19931},
pages = {66 - 73},
year = {2012},
note = {Record converted from JUWEL: 18.07.2013},
comment = {ChemPhysChem 2012, 13, 66 – 73},
booktitle = {ChemPhysChem 2012, 13, 66 – 73},
abstract = {Chemical etching is widely applied to texture the surface
of sputter-deposited zinc oxide for light scattering in
thin-film silicon solar cells. Based on experimental
findings from the literature and our own results we propose
a model that explains the etching behavior of ZnO depending
on the structural material properties and etching agent. All
grain boundaries are prone to be etched to a certain
threshold, that is defined by the deposition conditions and
etching solution. Additionally, several approaches to modify
the etching behavior through special preparation and etching
steps are provided.},
keywords = {J (WoSType)},
cin = {IEK-5},
ddc = {500},
cid = {I:(DE-Juel1)IEK-5-20101013},
pnm = {Erneuerbare Energien},
pid = {G:(DE-Juel1)FUEK401},
shelfmark = {Chemistry, Physical / Physics, Atomic, Molecular $\&$
Chemical},
typ = {PUB:(DE-HGF)16},
pubmed = {pmid:22162035},
UT = {WOS:000298913500007},
doi = {10.1002/cphc.201100738},
url = {https://juser.fz-juelich.de/record/19931},
}