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001     19931
005     20240712084525.0
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084 _ _ |2 WoS
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100 1 _ |0 P:(DE-Juel1)130252
|a Hüpkes, J.
|b 0
|u FZJ
245 _ _ |a Chemical Etching of Zinc Oxide for Thin-Film Silicon Solar Cells
260 _ _ |a Weinheim
|b Wiley-VCH Verl.
|c 2012
295 1 0 |a ChemPhysChem 2012, 13, 66 – 73
300 _ _ |a 66 - 73
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500 _ _ |a The authors thank G. Wittstock and N. Jacobs (University of Oldenburg, Germany) for their kind assistance with the waterless etching experiments. We are deeply indebted to all former and current coworkers and colleagues who have been involved in joint experiments and discussions concerning the etching behavior of ZnO. The presented model would not exist without their invaluable contributions. Ongoing financial support by the German Federal Environment Ministry (BMU, grants 0327693 A and 0325299 A) and by the Deutsche Forschungsgemeinschaft (DFG, grant PU 447/1-1) is gratefully acknowledged.
520 _ _ |a Chemical etching is widely applied to texture the surface of sputter-deposited zinc oxide for light scattering in thin-film silicon solar cells. Based on experimental findings from the literature and our own results we propose a model that explains the etching behavior of ZnO depending on the structural material properties and etching agent. All grain boundaries are prone to be etched to a certain threshold, that is defined by the deposition conditions and etching solution. Additionally, several approaches to modify the etching behavior through special preparation and etching steps are provided.
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542 _ _ |l "Copyright 2012 Wiley-VCH Verlag GmbH& Co. KGaA, Weinheim" http://dx.doi.org/10.1002/cphc.201100738
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653 2 0 |2 Author
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653 2 0 |2 Author
|a etching
653 2 0 |2 Author
|a interfaces
653 2 0 |2 Author
|a solar cells
653 2 0 |2 Author
|a zinc oxide
700 1 _ |0 P:(DE-Juel1)VDB91583
|a Owen, J. I.
|b 1
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700 1 _ |0 P:(DE-Juel1)138216
|a Pust, S. E.
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700 1 _ |0 P:(DE-Juel1)156447
|a Bunte, E.
|b 3
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773 _ _ |0 PERI:(DE-600)2025223-7
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856 7 _ |u http://dx.doi.org/10.1002/cphc.201100738
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