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@ARTICLE{Gatz:19932,
      author       = {Gatz, S. and Dullweber, T. and Mertens, V. and Einsele, F.
                      and Brendel, R.},
      title        = {{F}iring stability of {S}i{N}(y)/{S}i{N}(x) stacks for the
                      surface passivation of crystalline silicon solar cells},
      journal      = {Solar energy materials $\&$ solar cells},
      volume       = {96},
      issn         = {0927-0248},
      address      = {Amsterdam},
      publisher    = {North Holland},
      reportid     = {PreJuSER-19932},
      pages        = {180 - 185},
      year         = {2012},
      note         = {The authors thank M. Perutz, S. Braunig, S. Spatlich and S.
                      Wyczanowski for the sample preparation. This work was
                      supported by the German Federal Ministry for the
                      Environment, Nature Conservation and Nuclear Safety under
                      Contract No. 0327529A, which is gratefully acknowledged.},
      abstract     = {In the photovoltaic industry contacts to crystalline
                      silicon are typically formed by firing of screen-printed
                      metallization pastes. However, the stability of surface
                      passivation layers during high temperature contact formation
                      is a major challenge. Here, we investigate the thermal
                      stability of the surface passivation by amorphous silicon
                      nitride double layers (SiNy/SiNx). The SiNy passivation
                      layer is silicon rich with refractive index larger than 3.
                      Whereas the SiNx capping layer has a refractive index of
                      2.05. Compared to pure hydrogenated amorphous silicon, the
                      nitrogen in the SiNy passivation layer improves the firing
                      stability. We achieve an effective surface recombination
                      velocity after a conventional co-firing process of (5.2 +/-
                      2) cm/s on p-type (1.5 Omega cm) FZ-silicon wafers at an
                      injection density of 10(15) cm(-3). An analysis of the
                      improved firing stability is presented based on FTIR and
                      hydrogen effusion measurements. The incorporation of an
                      SiNy/SiNx stack into the passivated rear of Cz silicon
                      screen-printed solar cells results in an energy conversion
                      efficiency of $18.3\%$ compared to reference solar cells
                      with conventional aluminum back surface field showing
                      $17.9\%$ efficiency. The short circuit current density
                      increases by up to 0.8 mA/cm(2) compared to conventional
                      solar cells due to the improved optical reflectance and rear
                      side surface passivation. (C) 2011 Elsevier By. All rights
                      reserved.},
      keywords     = {J (WoSType)},
      cin          = {IEK-5},
      ddc          = {530},
      cid          = {I:(DE-Juel1)IEK-5-20101013},
      pnm          = {Erneuerbare Energien},
      pid          = {G:(DE-Juel1)FUEK401},
      shelfmark    = {Energy $\&$ Fuels / Materials Science, Multidisciplinary},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000298534000025},
      doi          = {10.1016/j.solmat.2011.09.051},
      url          = {https://juser.fz-juelich.de/record/19932},
}