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@INPROCEEDINGS{Richter:200860,
      author       = {Richter, Alexei and Zhao, Lei and Finger, Friedhelm and
                      Ding, Kaining},
      title        = {{N}ano-{C}omposite {M}icrostructure {M}odel for the
                      {C}lassification of {H}ydrogenated {N}anocrystalline
                      {S}ilicon {O}xide {T}hin-{F}ilms},
      reportid     = {FZJ-2015-03233},
      year         = {2015},
      abstract     = {A straightforward approach to increase the solar energy
                      conversion efficiency in solar cells is to reduce their
                      optical loss while maintaining the electrical performance.
                      For example, nanocrystalline hydrogenated silicon oxide
                      (nc-SiOx:H) can be implemented in silicon based solar cells
                      as a wide optical band gap material to diminish parasitic
                      optical losses. At the same time, an excellent electrical
                      conductivity can be achieved due to its unique
                      microstructure. In the present work, we introduce a
                      microstructure model that consistently correlates the
                      nc-SiOx:H microstructure to the deposition conditions during
                      Plasma Enhanced Chemical Vapour Deposition (PECVD) as well
                      as to the optoelectronic properties of nc-SiOx:H thin films.
                      We successfully validated the model by means of a large
                      quantity of systematically and individually optimized n- and
                      p-doped nc-SiOx:H films deposited at very high frequency
                      (VHF) and radio frequency (RF). In particular, this model
                      shows that the improved optoelectronic performance of
                      nc-SiOx:H films deposited at VHF as compared to RF might be
                      a consequence of an improved phase separation between the
                      conductive nanocrystalline silicon and the oxygen rich
                      matrix at VHF, which in turn is likely due to a higher
                      hydrogen radical density in the plasma as compared to RF. In
                      addition, we present our latest results on silicon thin-film
                      and silicon heterojunction solar cells using our newly
                      developed VHF nc-SiOx:H with superior optoelectronic
                      properties.},
      month         = {May},
      date          = {2015-05-11},
      organization  = {The 2015 Spring Conference of the
                       European Materials Research Society,
                       Lille (France), 11 May 2015 - 15 May
                       2015},
      subtyp        = {Other},
      cin          = {IEK-5},
      cid          = {I:(DE-Juel1)IEK-5-20101013},
      pnm          = {121 - Solar cells of the next generation (POF3-121) / HITEC
                      - Helmholtz Interdisciplinary Doctoral Training in Energy
                      and Climate Research (HITEC) (HITEC-20170406)},
      pid          = {G:(DE-HGF)POF3-121 / G:(DE-Juel1)HITEC-20170406},
      typ          = {PUB:(DE-HGF)6},
      url          = {https://juser.fz-juelich.de/record/200860},
}