Home > Publications database > Nano-Composite Microstructure Model for the Classification of Hydrogenated Nanocrystalline Silicon Oxide Thin-Films > print

001     200860
005     20240708133712.0
037 _ _ |a FZJ-2015-03233
041 _ _ |a English
100 1 _ |a Richter, Alexei
|0 P:(DE-Juel1)162140
|b 0
|e Corresponding Author
111 2 _ |a The 2015 Spring Conference of the European Materials Research Society
|g E-MRS Spring Meeting 2015
|c Lille
|d 2015-05-11 - 2015-05-15
|w France
245 _ _ |a Nano-Composite Microstructure Model for the Classification of Hydrogenated Nanocrystalline Silicon Oxide Thin-Films
260 _ _ |c 2015
336 7 _ |a Conference Presentation
|b conf
|m conf
|0 PUB:(DE-HGF)6
|s 1436865005_20870
|2 PUB:(DE-HGF)
|x Other
336 7 _ |a Conference Paper
|0 33
|2 EndNote
336 7 _ |a Other
|2 DataCite
336 7 _ |a LECTURE_SPEECH
|2 ORCID
336 7 _ |a conferenceObject
|2 DRIVER
336 7 _ |a INPROCEEDINGS
|2 BibTeX
520 _ _ |a A straightforward approach to increase the solar energy conversion efficiency in solar cells is to reduce their optical loss while maintaining the electrical performance. For example, nanocrystalline hydrogenated silicon oxide (nc-SiOx:H) can be implemented in silicon based solar cells as a wide optical band gap material to diminish parasitic optical losses. At the same time, an excellent electrical conductivity can be achieved due to its unique microstructure. In the present work, we introduce a microstructure model that consistently correlates the nc-SiOx:H microstructure to the deposition conditions during Plasma Enhanced Chemical Vapour Deposition (PECVD) as well as to the optoelectronic properties of nc-SiOx:H thin films. We successfully validated the model by means of a large quantity of systematically and individually optimized n- and p-doped nc-SiOx:H films deposited at very high frequency (VHF) and radio frequency (RF). In particular, this model shows that the improved optoelectronic performance of nc-SiOx:H films deposited at VHF as compared to RF might be a consequence of an improved phase separation between the conductive nanocrystalline silicon and the oxygen rich matrix at VHF, which in turn is likely due to a higher hydrogen radical density in the plasma as compared to RF. In addition, we present our latest results on silicon thin-film and silicon heterojunction solar cells using our newly developed VHF nc-SiOx:H with superior optoelectronic properties.
536 _ _ |a 121 - Solar cells of the next generation (POF3-121)
|0 G:(DE-HGF)POF3-121
|c POF3-121
|f POF III
|x 0
536 _ _ |0 G:(DE-Juel1)HITEC-20170406
|x 1
|c HITEC-20170406
|a HITEC - Helmholtz Interdisciplinary Doctoral Training in Energy and Climate Research (HITEC) (HITEC-20170406)
700 1 _ |a Zhao, Lei
|0 P:(DE-Juel1)159406
|b 1
700 1 _ |a Finger, Friedhelm
|0 P:(DE-Juel1)130238
|b 2
700 1 _ |a Ding, Kaining
|0 P:(DE-Juel1)130233
|b 3
773 _ _ |y 2015
909 C O |o oai:juser.fz-juelich.de:200860
|p VDB
910 1 _ |a Forschungszentrum Jülich GmbH
|0 I:(DE-588b)5008462-8
|k FZJ
|b 0
|6 P:(DE-Juel1)162140
910 1 _ |a Forschungszentrum Jülich GmbH
|0 I:(DE-588b)5008462-8
|k FZJ
|b 2
|6 P:(DE-Juel1)130238
910 1 _ |a Forschungszentrum Jülich GmbH
|0 I:(DE-588b)5008462-8
|k FZJ
|b 3
|6 P:(DE-Juel1)130233
913 1 _ |a DE-HGF
|l Erneuerbare Energien
|1 G:(DE-HGF)POF3-120
|0 G:(DE-HGF)POF3-121
|2 G:(DE-HGF)POF3-100
|v Solar cells of the next generation
|x 0
|4 G:(DE-HGF)POF
|3 G:(DE-HGF)POF3
|b Energie
914 1 _ |y 2015
920 _ _ |l yes
920 1 _ |0 I:(DE-Juel1)IEK-5-20101013
|k IEK-5
|l Photovoltaik
|x 0
980 _ _ |a conf
980 _ _ |a VDB
980 _ _ |a I:(DE-Juel1)IEK-5-20101013
980 _ _ |a UNRESTRICTED
981 _ _ |a I:(DE-Juel1)IMD-3-20101013

LibraryCollectionCLSMajorCLSMinorLanguageAuthor
Marc 21