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@ARTICLE{Schneemann:200929,
      author       = {Schneemann, Matthias and Kirchartz, Thomas and Carius,
                      Reinhard and Rau, Uwe},
      title        = {{E}lectric properties and carrier multiplication in
                      breakdown sites in multi-crystalline silicon solar cells},
      journal      = {Journal of applied physics},
      volume       = {117},
      number       = {20},
      issn         = {1089-7550},
      address      = {Melville, NY},
      publisher    = {American Inst. of Physics},
      reportid     = {FZJ-2015-03276},
      pages        = {205703},
      year         = {2015},
      abstract     = {This paper studies the effective electrical size and
                      carrier multiplication of breakdown sites in
                      multi-crystalline silicon solar cells. The local series
                      resistance limits the current of each breakdown site and is
                      thereby linearizing the current-voltage characteristic. This
                      fact allows the estimation of the effective electrical
                      diameters to be as low as 100 nm. Using a laser beam
                      induced current (LBIC) measurement with a high spatial
                      resolution, we find carrier multiplication factors on the
                      order of 30 (Zener-type breakdown) and 100 (avalanche
                      breakdown) as new lower limits. Hence, we prove that also
                      the so-called Zener-type breakdown is followed by avalanche
                      multiplication. We explain that previous measurements of the
                      carrier multiplication using thermography yield results
                      higher than unity, only if the spatial defect density is
                      high enough, and the illumination intensity is lower than
                      what was used for the LBIC method. The individual series
                      resistances of the breakdown sites limit the current through
                      these breakdown sites. Therefore, the measured
                      multiplication factors depend on the applied voltage as well
                      as on the injected photocurrent. Both dependencies are
                      successfully simulated using a series-resistance-limited
                      diode model.},
      cin          = {IEK-5},
      ddc          = {530},
      cid          = {I:(DE-Juel1)IEK-5-20101013},
      pnm          = {121 - Solar cells of the next generation (POF3-121)},
      pid          = {G:(DE-HGF)POF3-121},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000355918300036},
      doi          = {10.1063/1.4921286},
      url          = {https://juser.fz-juelich.de/record/200929},
}