%0 Journal Article
%A Zhirnov, Victor V.
%A Cavin, Ralph K.
%A Menzel, Stephan
%A Linn, Eike
%A Schmelzer, Sebastian
%A Brauhaus, Dennis
%A Schindler, Christina
%A Waser, R.
%T Memory Devices: Energy–Space–Time Tradeoffs
%J Proceedings of the IEEE
%V 98
%N 12
%@ 1558-2256
%C New York, NY [u.a.]
%M FZJ-2015-03334
%P 2185 - 2200
%D 2010
%X Many memory candidates based on beyond complementary metal-oxide-semiconductor (CMOS) nanoelectronics have been proposed, but no clear successor has yet been identified. In this paper, we offer a methodology for system-level analysis and address the relationship of the maximum performance of a given memory device type to device physics. The method is illustrated for the classical dynamic RAM (DRAM) device and for the emerging memory device known as the resistive RAM (ReRAM)
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000284410800015
%R 10.1109/JPROC.2010.2064271
%U https://juser.fz-juelich.de/record/201024