TY  - JOUR
AU  - Zhirnov, Victor V.
AU  - Cavin, Ralph K.
AU  - Menzel, Stephan
AU  - Linn, Eike
AU  - Schmelzer, Sebastian
AU  - Brauhaus, Dennis
AU  - Schindler, Christina
AU  - Waser, R.
TI  - Memory Devices: Energy–Space–Time Tradeoffs
JO  - Proceedings of the IEEE
VL  - 98
IS  - 12
SN  - 1558-2256
CY  - New York, NY [u.a.]
M1  - FZJ-2015-03334
SP  - 2185 - 2200
PY  - 2010
AB  - Many memory candidates based on beyond complementary metal-oxide-semiconductor (CMOS) nanoelectronics have been proposed, but no clear successor has yet been identified. In this paper, we offer a methodology for system-level analysis and address the relationship of the maximum performance of a given memory device type to device physics. The method is illustrated for the classical dynamic RAM (DRAM) device and for the emerging memory device known as the resistive RAM (ReRAM)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000284410800015
DO  - DOI:10.1109/JPROC.2010.2064271
UR  - https://juser.fz-juelich.de/record/201024
ER  -