000201046 001__ 201046
000201046 005__ 20240610120335.0
000201046 0247_ $$2doi$$a10.1063/1.4921867
000201046 0247_ $$2ISSN$$a0021-8979
000201046 0247_ $$2ISSN$$a0148-6349
000201046 0247_ $$2ISSN$$a1089-7550
000201046 0247_ $$2WOS$$aWOS:000355925600042
000201046 0247_ $$2Handle$$a2128/17107
000201046 037__ $$aFZJ-2015-03356
000201046 082__ $$a530
000201046 1001_ $$0P:(DE-HGF)0$$aHahn, Herwig$$b0$$eCorresponding Author
000201046 245__ $$aControlling the interface charge density in GaN-based metal-oxide-semiconductor heterostructures by plasma oxidation of metal layers
000201046 260__ $$aMelville, NY$$bAmerican Inst. of Physics$$c2015
000201046 3367_ $$2DRIVER$$aarticle
000201046 3367_ $$2DataCite$$aOutput Types/Journal article
000201046 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article$$bjournal$$mjournal$$s1433927005_12154
000201046 3367_ $$2BibTeX$$aARTICLE
000201046 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000201046 3367_ $$00$$2EndNote$$aJournal Article
000201046 520__ $$aIn recent years, investigating and engineering the oxide-semiconductor interface in GaN-based devices has come into focus. This has been driven by a large effort to increase the gate robustness and to obtain enhancement mode transistors. Since it has been shown that deep interface states act as fixed interface charge in the typical transistor operating regime, it appears desirable to intentionally incorporate negative interface charge, and thus, to allow for a positive shift in threshold voltage of transistors to realise enhancement mode behaviour. A rather new approach to obtain such negative charge is the plasma-oxidation of thin metal layers. In this study, we present transmission electron microscopy and energy dispersive X-ray spectroscopy analysis as well as electrical data for Al-, Ti-, and Zr-based thin oxide films on a GaN-based heterostructure. It is shown that the plasma-oxidised layers have a polycrystalline morphology. An interfacial amorphous oxide layer is only detectable in the case of Zr. In addition, all films exhibit net negative charge with varying densities. The Zr layer is providing a negative interface charge density of more than 1 × 1013 cm–2 allowing to considerably shift the threshold voltage to more positive values.
000201046 536__ $$0G:(DE-HGF)POF3-143$$a143 - Controlling Configuration-Based Phenomena (POF3-143)$$cPOF3-143$$fPOF III$$x0
000201046 588__ $$aDataset connected to CrossRef, juser.fz-juelich.de
000201046 7001_ $$0P:(DE-HGF)0$$aPécz, Béla$$b1
000201046 7001_ $$0P:(DE-Juel1)144926$$aKovács, András$$b2$$ufzj
000201046 7001_ $$0P:(DE-HGF)0$$aHeuken, Michael$$b3
000201046 7001_ $$0P:(DE-HGF)0$$aKalisch, Holger$$b4
000201046 7001_ $$0P:(DE-HGF)0$$aVescan, Andrei$$b5
000201046 773__ $$0PERI:(DE-600)1476463-5$$a10.1063/1.4921867$$gVol. 117, no. 21, p. 214503 -$$n21$$p214503$$tJournal of applied physics$$v117$$x1089-7550$$y2015
000201046 8564_ $$uhttps://juser.fz-juelich.de/record/201046/files/1.4921867.pdf$$yOpenAccess
000201046 8564_ $$uhttps://juser.fz-juelich.de/record/201046/files/1.4921867.gif?subformat=icon$$xicon$$yOpenAccess
000201046 8564_ $$uhttps://juser.fz-juelich.de/record/201046/files/1.4921867.jpg?subformat=icon-1440$$xicon-1440$$yOpenAccess
000201046 8564_ $$uhttps://juser.fz-juelich.de/record/201046/files/1.4921867.jpg?subformat=icon-180$$xicon-180$$yOpenAccess
000201046 8564_ $$uhttps://juser.fz-juelich.de/record/201046/files/1.4921867.jpg?subformat=icon-640$$xicon-640$$yOpenAccess
000201046 8564_ $$uhttps://juser.fz-juelich.de/record/201046/files/1.4921867.pdf?subformat=pdfa$$xpdfa$$yOpenAccess
000201046 909CO $$ooai:juser.fz-juelich.de:201046$$pdnbdelivery$$pdriver$$pVDB$$popen_access$$popenaire
000201046 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)144926$$aForschungszentrum Jülich GmbH$$b2$$kFZJ
000201046 9130_ $$0G:(DE-HGF)POF2-42G41$$1G:(DE-HGF)POF2-420$$2G:(DE-HGF)POF2-400$$aDE-HGF$$bSchlüsseltechnologien$$lGrundlagen für zukünftige Informationstechnologien$$vPeter Grünberg-Centre (PG-C)$$x0
000201046 9131_ $$0G:(DE-HGF)POF3-143$$1G:(DE-HGF)POF3-140$$2G:(DE-HGF)POF3-100$$3G:(DE-HGF)POF3$$4G:(DE-HGF)POF$$aDE-HGF$$bEnergie$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vControlling Configuration-Based Phenomena$$x0
000201046 9141_ $$y2015
000201046 915__ $$0StatID:(DE-HGF)0150$$2StatID$$aDBCoverage$$bWeb of Science Core Collection
000201046 915__ $$0StatID:(DE-HGF)0100$$2StatID$$aJCR
000201046 915__ $$0StatID:(DE-HGF)0200$$2StatID$$aDBCoverage$$bSCOPUS
000201046 915__ $$0StatID:(DE-HGF)0110$$2StatID$$aWoS$$bScience Citation Index
000201046 915__ $$0StatID:(DE-HGF)0111$$2StatID$$aWoS$$bScience Citation Index Expanded
000201046 915__ $$0StatID:(DE-HGF)9900$$2StatID$$aIF <  5
000201046 915__ $$0StatID:(DE-HGF)0510$$2StatID$$aOpenAccess
000201046 915__ $$0StatID:(DE-HGF)1150$$2StatID$$aDBCoverage$$bCurrent Contents - Physical, Chemical and Earth Sciences
000201046 915__ $$0StatID:(DE-HGF)0300$$2StatID$$aDBCoverage$$bMedline
000201046 915__ $$0StatID:(DE-HGF)0199$$2StatID$$aDBCoverage$$bThomson Reuters Master Journal List
000201046 920__ $$lyes
000201046 9201_ $$0I:(DE-Juel1)PGI-5-20110106$$kPGI-5$$lMikrostrukturforschung$$x0
000201046 9201_ $$0I:(DE-82)080009_20140620$$kJARA-FIT$$lJARA-FIT$$x1
000201046 9801_ $$aFullTexts
000201046 980__ $$ajournal
000201046 980__ $$aVDB
000201046 980__ $$aUNRESTRICTED
000201046 980__ $$aI:(DE-Juel1)PGI-5-20110106
000201046 980__ $$aI:(DE-82)080009_20140620
000201046 981__ $$aI:(DE-Juel1)ER-C-1-20170209