% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@ARTICLE{Hahn:201046,
      author       = {Hahn, Herwig and Pécz, Béla and Kovács, András and
                      Heuken, Michael and Kalisch, Holger and Vescan, Andrei},
      title        = {{C}ontrolling the interface charge density in {G}a{N}-based
                      metal-oxide-semiconductor heterostructures by plasma
                      oxidation of metal layers},
      journal      = {Journal of applied physics},
      volume       = {117},
      number       = {21},
      issn         = {1089-7550},
      address      = {Melville, NY},
      publisher    = {American Inst. of Physics},
      reportid     = {FZJ-2015-03356},
      pages        = {214503},
      year         = {2015},
      abstract     = {In recent years, investigating and engineering the
                      oxide-semiconductor interface in GaN-based devices has come
                      into focus. This has been driven by a large effort to
                      increase the gate robustness and to obtain enhancement mode
                      transistors. Since it has been shown that deep interface
                      states act as fixed interface charge in the typical
                      transistor operating regime, it appears desirable to
                      intentionally incorporate negative interface charge, and
                      thus, to allow for a positive shift in threshold voltage of
                      transistors to realise enhancement mode behaviour. A rather
                      new approach to obtain such negative charge is the
                      plasma-oxidation of thin metal layers. In this study, we
                      present transmission electron microscopy and energy
                      dispersive X-ray spectroscopy analysis as well as electrical
                      data for Al-, Ti-, and Zr-based thin oxide films on a
                      GaN-based heterostructure. It is shown that the
                      plasma-oxidised layers have a polycrystalline morphology. An
                      interfacial amorphous oxide layer is only detectable in the
                      case of Zr. In addition, all films exhibit net negative
                      charge with varying densities. The Zr layer is providing a
                      negative interface charge density of more than
                      1 × 1013 cm–2 allowing to considerably shift the
                      threshold voltage to more positive values.},
      cin          = {PGI-5 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-5-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {143 - Controlling Configuration-Based Phenomena (POF3-143)},
      pid          = {G:(DE-HGF)POF3-143},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000355925600042},
      doi          = {10.1063/1.4921867},
      url          = {https://juser.fz-juelich.de/record/201046},
}