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@ARTICLE{Meier:201179,
      author       = {Meier, Matthias and Merdzhanova, T. and Paetzold, U. W. and
                      Muthmann, S. and Mück, A. and Schmitz, Ralf and Gordijn,
                      A.},
      title        = {{I}n {S}itu {C}urrent {D}etermination of a-{S}i/μc-{S}i
                      {T}andem {S}olar {C}ells via {T}ransmission {M}easurements
                      {D}uring {S}ilicon {PECVD}},
      journal      = {IEEE journal of photovoltaics},
      volume       = {2},
      number       = {2},
      issn         = {2156-3381},
      address      = {New York, NY},
      publisher    = {IEEE},
      reportid     = {FZJ-2015-03484},
      pages        = {77 - 82},
      year         = {2012},
      abstract     = {In situ optical transmission measurements performed during
                      thin-film silicon plasma-enhanced chemical vapor deposition
                      (PECVD) are presented. Hereto, the plasma emission was used
                      as light source. With this setup information about
                      thickness, crystallinity and absorption characteristic of
                      the growing intrinsic silicon thin film can be obtained. By
                      integrating the intrinsic layers in solar cells with p-i-n
                      configuration, the layer information gained in situ during
                      the PECVD process can be directly correlated to the
                      generated short-circuit current of the solar cell. The
                      intention of this paper is to show that, by using these
                      transmission measurements for the estimation of solar cell
                      currents, an in situ current matching of stacked a-Si/μc-Si
                      tandem devices is possible, which is a useful extension of
                      the process control techniques.},
      cin          = {IEK-5},
      ddc          = {530},
      cid          = {I:(DE-Juel1)IEK-5-20101013},
      pnm          = {111 - Thin Film Photovoltaics (POF2-111)},
      pid          = {G:(DE-HGF)POF2-111},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000318425200001},
      doi          = {10.1109/JPHOTOV.2011.2179413},
      url          = {https://juser.fz-juelich.de/record/201179},
}