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@ARTICLE{Kim:201190,
      author       = {Kim, Do Yun and Santbergen, Rudi and Jäger, Klaus and
                      Sever, Martin and Krč, Janez and Topič, Marko and Hänni,
                      Simon and Zhang, Chao and Heidt, Anna and Meier, Matthias
                      and van Swaaij, René A. C. M. M. and Zeman, Miro},
      title        = {{E}ffect of {S}ubstrate {M}orphology {S}lope
                      {D}istributions on {L}ight {S}cattering, nc-{S}i:{H} {F}ilm
                      {G}rowth, and {S}olar {C}ell {P}erformance},
      journal      = {ACS applied materials $\&$ interfaces},
      volume       = {6},
      number       = {24},
      issn         = {1944-8252},
      address      = {Washington, DC},
      publisher    = {Soc.},
      reportid     = {FZJ-2015-03495},
      pages        = {22061 - 22068},
      year         = {2014},
      abstract     = {Thin-film silicon solar cells are often deposited on
                      textured ZnO substrates. The solar-cell performance is
                      strongly correlated to the substrate morphology, as this
                      morphology determines light scattering, defective-region
                      formation, and crystalline growth of hydrogenated
                      nanocrystalline silicon (nc-Si:H). Our objective is to gain
                      deeper insight in these correlations using the slope
                      distribution, rms roughness (σrms) and correlation length
                      (lc) of textured substrates. A wide range of surface
                      morphologies was obtained by Ar plasma treatment and wet
                      etching of textured and flat-as-deposited ZnO substrates.
                      The σrms, lc and slope distribution were deduced from AFM
                      scans. Especially, the slope distribution of substrates was
                      represented in an efficient way that light scattering and
                      film growth direction can be more directly estimated at the
                      same time. We observed that besides a high σrms, a high
                      slope angle is beneficial to obtain high haze and scattering
                      of light at larger angles, resulting in higher short-circuit
                      current density of nc-Si:H solar cells. However, a high
                      slope angle can also promote the creation of defective
                      regions in nc-Si:H films grown on the substrate. It is also
                      found that the crystalline fraction of nc-Si:H solar cells
                      has a stronger correlation with the slope distributions than
                      with σrms of substrates. In this study, we successfully
                      correlate all these observations with the solar-cell
                      performance by using the slope distribution of substrates.},
      cin          = {IEK-5},
      ddc          = {540},
      cid          = {I:(DE-Juel1)IEK-5-20101013},
      pnm          = {111 - Thin Film Photovoltaics (POF2-111) / HITEC -
                      Helmholtz Interdisciplinary Doctoral Training in Energy and
                      Climate Research (HITEC) (HITEC-20170406)},
      pid          = {G:(DE-HGF)POF2-111 / G:(DE-Juel1)HITEC-20170406},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000347139400038},
      doi          = {10.1021/am5054114},
      url          = {https://juser.fz-juelich.de/record/201190},
}