000201276 001__ 201276
000201276 005__ 20240610120353.0
000201276 0247_ $$2doi$$a10.1063/1.4818456
000201276 0247_ $$2ISSN$$a0003-6951
000201276 0247_ $$2ISSN$$a1931-9401
000201276 0247_ $$2WOS$$aWOS:000323788100017
000201276 0247_ $$2Handle$$a2128/17244
000201276 037__ $$aFZJ-2015-03581
000201276 041__ $$aEnglish
000201276 082__ $$a530
000201276 1001_ $$0P:(DE-Juel1)125567$$aBorisova, Svetlana$$b0$$eCorresponding Author
000201276 245__ $$aDomain formation due to surface steps in topological insulator Bi$_{2}$Te$_{3}$ thin films grown on Si (111) by molecular beam epitaxy
000201276 260__ $$aMelville, NY$$bAmerican Inst. of Physics$$c2013
000201276 3367_ $$2DRIVER$$aarticle
000201276 3367_ $$2DataCite$$aOutput Types/Journal article
000201276 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article$$bjournal$$mjournal$$s1433836363_26779
000201276 3367_ $$2BibTeX$$aARTICLE
000201276 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000201276 3367_ $$00$$2EndNote$$aJournal Article
000201276 520__ $$aThe atomic structure of topological insulators Bi2Te3 thin films on Si (111) substrates grown in van der Waals mode by molecular beam epitaxy has been investigated by in situ scanning tunneling microscopy and scanning transmission electron microscopy. Besides single and multiple quintuple layer (QL) steps, which are typical for the step-flow mode of growth, a number of 0.4 QL steps is observed. We determine that these steps originate from single steps at the substrate surface causing domain boundaries in the Bi2Te3 film. Due to the peculiar structure of these domain boundaries the domains are stable and penetrate throughout the entire film.
000201276 536__ $$0G:(DE-HGF)POF2-421$$a421 - Frontiers of charge based Electronics (POF2-421)$$cPOF2-421$$fPOF II$$x0
000201276 588__ $$aDataset connected to CrossRef, juser.fz-juelich.de
000201276 7001_ $$0P:(DE-Juel1)145467$$aKampmeier, J.$$b1$$ufzj
000201276 7001_ $$0P:(DE-Juel1)130811$$aLuysberg, M.$$b2$$ufzj
000201276 7001_ $$0P:(DE-Juel1)128617$$aMussler, G.$$b3$$ufzj
000201276 7001_ $$0P:(DE-Juel1)125588$$aGrützmacher, D.$$b4$$ufzj
000201276 773__ $$0PERI:(DE-600)1469436-0$$a10.1063/1.4818456$$gVol. 103, no. 8, p. 081902 -$$n8$$p081902$$tApplied physics letters$$v103$$x0003-6951$$y2013
000201276 8564_ $$uhttps://juser.fz-juelich.de/record/201276/files/1.4818456.pdf$$yOpenAccess
000201276 8564_ $$uhttps://juser.fz-juelich.de/record/201276/files/1.4818456.gif?subformat=icon$$xicon$$yOpenAccess
000201276 8564_ $$uhttps://juser.fz-juelich.de/record/201276/files/1.4818456.jpg?subformat=icon-1440$$xicon-1440$$yOpenAccess
000201276 8564_ $$uhttps://juser.fz-juelich.de/record/201276/files/1.4818456.jpg?subformat=icon-180$$xicon-180$$yOpenAccess
000201276 8564_ $$uhttps://juser.fz-juelich.de/record/201276/files/1.4818456.jpg?subformat=icon-640$$xicon-640$$yOpenAccess
000201276 8564_ $$uhttps://juser.fz-juelich.de/record/201276/files/1.4818456.pdf?subformat=pdfa$$xpdfa$$yOpenAccess
000201276 909CO $$ooai:juser.fz-juelich.de:201276$$pdnbdelivery$$pdriver$$popenaire$$pVDB$$popen_access
000201276 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)125567$$aForschungszentrum Jülich GmbH$$b0$$kFZJ
000201276 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)145467$$aForschungszentrum Jülich GmbH$$b1$$kFZJ
000201276 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)130811$$aForschungszentrum Jülich GmbH$$b2$$kFZJ
000201276 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)128617$$aForschungszentrum Jülich GmbH$$b3$$kFZJ
000201276 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)125588$$aForschungszentrum Jülich GmbH$$b4$$kFZJ
000201276 9132_ $$0G:(DE-HGF)POF3-899$$1G:(DE-HGF)POF3-890$$2G:(DE-HGF)POF3-800$$aDE-HGF$$bForschungsbereich Materie$$lForschungsbereich Materie$$vohne Topic$$x0
000201276 9131_ $$0G:(DE-HGF)POF2-421$$1G:(DE-HGF)POF2-420$$2G:(DE-HGF)POF2-400$$3G:(DE-HGF)POF2$$4G:(DE-HGF)POF$$aDE-HGF$$bSchlüsseltechnologien$$lGrundlagen zukünftiger Informationstechnologien$$vFrontiers of charge based Electronics$$x0
000201276 915__ $$0StatID:(DE-HGF)0150$$2StatID$$aDBCoverage$$bWeb of Science Core Collection
000201276 915__ $$0StatID:(DE-HGF)0100$$2StatID$$aJCR
000201276 915__ $$0StatID:(DE-HGF)0200$$2StatID$$aDBCoverage$$bSCOPUS
000201276 915__ $$0StatID:(DE-HGF)0110$$2StatID$$aWoS$$bScience Citation Index
000201276 915__ $$0StatID:(DE-HGF)0111$$2StatID$$aWoS$$bScience Citation Index Expanded
000201276 915__ $$0StatID:(DE-HGF)9900$$2StatID$$aIF <  5
000201276 915__ $$0StatID:(DE-HGF)0510$$2StatID$$aOpenAccess
000201276 915__ $$0StatID:(DE-HGF)1150$$2StatID$$aDBCoverage$$bCurrent Contents - Physical, Chemical and Earth Sciences
000201276 915__ $$0StatID:(DE-HGF)0300$$2StatID$$aDBCoverage$$bMedline
000201276 915__ $$0StatID:(DE-HGF)0199$$2StatID$$aDBCoverage$$bThomson Reuters Master Journal List
000201276 920__ $$lyes
000201276 9201_ $$0I:(DE-Juel1)PGI-5-20110106$$kPGI-5$$lMikrostrukturforschung$$x0
000201276 9201_ $$0I:(DE-Juel1)PGI-9-20110106$$kPGI-9$$lHalbleiter-Nanoelektronik$$x1
000201276 9801_ $$aFullTexts
000201276 980__ $$ajournal
000201276 980__ $$aVDB
000201276 980__ $$aUNRESTRICTED
000201276 980__ $$aI:(DE-Juel1)PGI-5-20110106
000201276 980__ $$aI:(DE-Juel1)PGI-9-20110106
000201276 981__ $$aI:(DE-Juel1)ER-C-1-20170209
000201276 981__ $$aI:(DE-Juel1)PGI-9-20110106