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@ARTICLE{Tappertzhofen:201474,
author = {Tappertzhofen, Stefan and Linn, Eike and Menzel, Stephan
and Kenyon, Anthony J. and Waser, Rainer and Valov, Ilia},
title = {{M}odeling of {Q}uantized {C}onductance {E}ffects in
{E}lectrochemical {M}etallization {C}ells},
journal = {IEEE transactions on nanotechnology},
volume = {14},
number = {3},
issn = {1941-0085},
address = {New York, NY},
publisher = {IEEE},
reportid = {FZJ-2015-03769},
pages = {505 - 512},
year = {2015},
abstract = {The integration of microelectronics and information
technology goes progressively on, and nonvolatile memory
devices are now based on processes on the atomic scale.
Thus, quantum size effects become an inevitable part of the
modern devices. Here, we report on conductance quantization
effects in electrochemical metallization cells at room
temperature. We modified the extended memristor model for a
SPICE simulation based on the experimental results for SiO2-
and AgI-based ECM cells. Additionally, we present a 1-D
kinetic Monte Carlo simulation model to account for quantum
size effects. Our simulation models comprises the impact of
the recently discovered nonequilibrium states on the
stability of quantized conductance values and reproduces the
stochastic nature of the resistance levels.},
cin = {PGI-7},
ddc = {530},
cid = {I:(DE-Juel1)PGI-7-20110106},
pnm = {524 - Controlling Collective States (POF3-524)},
pid = {G:(DE-HGF)POF3-524},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000354453800013},
doi = {10.1109/TNANO.2015.2411774},
url = {https://juser.fz-juelich.de/record/201474},
}