TY  - JOUR
AU  - Shkabko, Andrey
AU  - Aguirre, Myriam H
AU  - Kumar, Amit
AU  - Kim, Yunseok
AU  - Jesse, Stephen
AU  - Waser, Rainer
AU  - Kalinin, Sergei V
AU  - Weidenkaff, Anke
TI  - Surface deformations as a necessary requirement for resistance switching at the surface of SrTiO $_{3}$ :N
JO  - Nanotechnology
VL  - 24
IS  - 47
SN  - 1361-6528
CY  - Bristol
PB  - IOP Publ.
M1  - FZJ-2015-03837
SP  - 475701 -
PY  - 2013
AB  - Atomic force microscopy (AFM), conductive AFM and electrochemical strain microscopy were used to study the topography change at the defect surface of SrTiO3:N, breakdown in the electrical conduction of the tip/sample/electrode system and ionic motion. The IV curves show resistance switching behavior in a voltage range ±6 V < U <± 10 V and a current of maximum ±10 nA. A series of sweeping IV curves resulted in an increase in ionically polarized states (surface charging), electrochemical volume (surface deformations) and sequential formations of stable surface protrusions. The surface deformations are reversible (U <± 5 V) without IV pinched hysteresis and remained stable during the resistance switching (U >± 6 V), revealing the additional necessity (albeit insufficient due to 50% yield of working cells) of surface protrusion formation for resistance switching memory.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000326816600015
DO  - DOI:10.1088/0957-4484/24/47/475701
UR  - https://juser.fz-juelich.de/record/201543
ER  -