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@ARTICLE{Shkabko:201543,
      author       = {Shkabko, Andrey and Aguirre, Myriam H and Kumar, Amit and
                      Kim, Yunseok and Jesse, Stephen and Waser, Rainer and
                      Kalinin, Sergei V and Weidenkaff, Anke},
      title        = {{S}urface deformations as a necessary requirement for
                      resistance switching at the surface of {S}r{T}i{O} $_{3}$
                      :{N}},
      journal      = {Nanotechnology},
      volume       = {24},
      number       = {47},
      issn         = {1361-6528},
      address      = {Bristol},
      publisher    = {IOP Publ.},
      reportid     = {FZJ-2015-03837},
      pages        = {475701 -},
      year         = {2013},
      abstract     = {Atomic force microscopy (AFM), conductive AFM and
                      electrochemical strain microscopy were used to study the
                      topography change at the defect surface of SrTiO3:N,
                      breakdown in the electrical conduction of the
                      tip/sample/electrode system and ionic motion. The IV curves
                      show resistance switching behavior in a voltage range ±6 V
                      < U <± 10 V and a current of maximum ±10 nA. A series of
                      sweeping IV curves resulted in an increase in ionically
                      polarized states (surface charging), electrochemical volume
                      (surface deformations) and sequential formations of stable
                      surface protrusions. The surface deformations are reversible
                      (U <± 5 V) without IV pinched hysteresis and remained
                      stable during the resistance switching (U >± 6 V),
                      revealing the additional necessity (albeit insufficient due
                      to $50\%$ yield of working cells) of surface protrusion
                      formation for resistance switching memory.},
      cin          = {PGI-7},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-7-20110106},
      pnm          = {421 - Frontiers of charge based Electronics (POF2-421)},
      pid          = {G:(DE-HGF)POF2-421},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000326816600015},
      doi          = {10.1088/0957-4484/24/47/475701},
      url          = {https://juser.fz-juelich.de/record/201543},
}