TY  - JOUR
AU  - Somodi, P. K.
AU  - Twitchett-Harrison, A. C.
AU  - Midgley, P. A.
AU  - Kardynał, B. E.
AU  - Barnes, C. H. W.
AU  - Dunin-Borkowski, Rafal
TI  - Finite element simulations of electrostatic dopant potentials in thin semiconductor specimens for electron holography
JO  - Ultramicroscopy
VL  - 134
SN  - 0304-3991
CY  - Amsterdam
PB  - Elsevier Science
M1  - FZJ-2015-03838
SP  - 160 - 166
PY  - 2013
AB  - Two-dimensional finite element simulations of electrostatic dopant potentials in parallel-sided semiconductor specimens that contain p–n junctions are used to assess the effect of the electrical state of the surface of a thin specimen on projected potentials measured using off-axis electron holography in the transmission electron microscope. For a specimen that is constrained to have an equipotential surface, the simulations show that the step in the projected potential across a p–n junction is always lower than would be predicted from the properties of the bulk device, but is relatively insensitive to the value of the surface state energy, especially for thicker specimens and higher dopant concentrations. The depletion width measured from the projected potential, however, has a complicated dependence on specimen thickness. The results of the simulations are of broader interest for understanding the influence of surfaces and interfaces on electrostatic potentials in nanoscale semiconductor devices.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000324474900021
DO  - DOI:10.1016/j.ultramic.2013.06.023
UR  - https://juser.fz-juelich.de/record/201544
ER  -