% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@ARTICLE{Somodi:201544,
      author       = {Somodi, P. K. and Twitchett-Harrison, A. C. and Midgley, P.
                      A. and Kardynał, B. E. and Barnes, C. H. W. and
                      Dunin-Borkowski, Rafal},
      title        = {{F}inite element simulations of electrostatic dopant
                      potentials in thin semiconductor specimens for electron
                      holography},
      journal      = {Ultramicroscopy},
      volume       = {134},
      issn         = {0304-3991},
      address      = {Amsterdam},
      publisher    = {Elsevier Science},
      reportid     = {FZJ-2015-03838},
      pages        = {160 - 166},
      year         = {2013},
      abstract     = {Two-dimensional finite element simulations of electrostatic
                      dopant potentials in parallel-sided semiconductor specimens
                      that contain p–n junctions are used to assess the effect
                      of the electrical state of the surface of a thin specimen on
                      projected potentials measured using off-axis electron
                      holography in the transmission electron microscope. For a
                      specimen that is constrained to have an equipotential
                      surface, the simulations show that the step in the projected
                      potential across a p–n junction is always lower than would
                      be predicted from the properties of the bulk device, but is
                      relatively insensitive to the value of the surface state
                      energy, especially for thicker specimens and higher dopant
                      concentrations. The depletion width measured from the
                      projected potential, however, has a complicated dependence
                      on specimen thickness. The results of the simulations are of
                      broader interest for understanding the influence of surfaces
                      and interfaces on electrostatic potentials in nanoscale
                      semiconductor devices.},
      cin          = {PGI-5},
      ddc          = {570},
      cid          = {I:(DE-Juel1)PGI-5-20110106},
      pnm          = {42G - Peter Grünberg-Centre (PG-C) (POF2-42G41)},
      pid          = {G:(DE-HGF)POF2-42G41},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000324474900021},
      doi          = {10.1016/j.ultramic.2013.06.023},
      url          = {https://juser.fz-juelich.de/record/201544},
}