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@ARTICLE{Lentz:201548,
      author       = {Lentz, Florian and Roesgen, Bernd and Rana, Vikas and
                      Wouters, Dirk J. and Waser, R.},
      title        = {{C}urrent {C}ompliance-{D}ependent {N}onlinearity in ${\rm
                      {T}i{O}}_{2}$ {R}e{RAM}},
      journal      = {IEEE electron device letters},
      volume       = {34},
      number       = {8},
      issn         = {1558-0563},
      address      = {New York, NY},
      publisher    = {IEEE},
      reportid     = {FZJ-2015-03842},
      pages        = {996 - 998},
      year         = {2013},
      abstract     = {Nonvolatile redox-based resistive RAM (ReRAM) is considered
                      to be a promising candidate for passive nanocrossbar
                      integration. For this application, a high degree of
                      nonlinearity in I-V characteristics of the ReRAM device is
                      required. In this letter, the nonlinearity parameter as a
                      function of forming/SET current compliance in a
                      MOSFET-integrated TiN/TiO2/Ti/Pt ReRAM device is
                      investigated. The nonlinearity parameter in the ReRAM device
                      improves at the lower SET current compliance. This is due to
                      scaling down the conductive filaments during the forming and
                      the SET process. The nonlinearity is further increased by
                      scaling down the oxide thickness that is accompanied by a
                      reduction of the switching current.},
      cin          = {PGI-7},
      ddc          = {620},
      cid          = {I:(DE-Juel1)PGI-7-20110106},
      pnm          = {421 - Frontiers of charge based Electronics (POF2-421)},
      pid          = {G:(DE-HGF)POF2-421},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000323911800021},
      doi          = {10.1109/LED.2013.2265715},
      url          = {https://juser.fz-juelich.de/record/201548},
}