%0 Journal Article
%A Schmidt, Jan C.
%A Lisauskas, Alvydas
%A Roskos, Hartmut G.
%A Demarina, Nataliya
%T Electric field distribution in biased GaAs microstructures with field-pinning layers
%J Superlattices and microstructures
%V 52
%N 6
%@ 0749-6036
%C Oxford [u.a.]
%I Elsevier Science, Academic Press
%M FZJ-2015-03865
%P 1143 - 1154
%D 2012
%X Field-pinning layers are an approach to improve the homogeneity of the electric field in a biased semiconductor structure of length above the Kroemer criterion. Building a THz Bloch oscillator with such a structure requires superlattice regions. Nevertheless, GaAs layers are investigated here. We compare different periodic structures (alternating transit and field-pinning layers) via simulating the field distribution. It is shown that the development of propagating Gunn domains is suppressed when field-pinning layers are included, but the homogeneity of the field is still not satisfying for the purpose of building a Bloch gain THz source. Depending on the temperature, intra- and inter-period inhomogeneities occur.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000311020200010
%R 10.1016/j.spmi.2012.08.009
%U https://juser.fz-juelich.de/record/201571