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000201571 1001_ $$0P:(DE-HGF)0$$aSchmidt, Jan C.$$b0
000201571 245__ $$aElectric field distribution in biased GaAs microstructures with field-pinning layers
000201571 260__ $$aOxford [u.a.]$$bElsevier Science, Academic Press$$c2012
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000201571 520__ $$aField-pinning layers are an approach to improve the homogeneity of the electric field in a biased semiconductor structure of length above the Kroemer criterion. Building a THz Bloch oscillator with such a structure requires superlattice regions. Nevertheless, GaAs layers are investigated here. We compare different periodic structures (alternating transit and field-pinning layers) via simulating the field distribution. It is shown that the development of propagating Gunn domains is suppressed when field-pinning layers are included, but the homogeneity of the field is still not satisfying for the purpose of building a Bloch gain THz source. Depending on the temperature, intra- and inter-period inhomogeneities occur.
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000201571 7001_ $$0P:(DE-HGF)0$$aLisauskas, Alvydas$$b1$$eCorresponding Author
000201571 7001_ $$0P:(DE-HGF)0$$aRoskos, Hartmut G.$$b2
000201571 7001_ $$0P:(DE-Juel1)125576$$aDemarina, Nataliya$$b3$$eCorresponding Author
000201571 773__ $$0PERI:(DE-600)1471791-8$$a10.1016/j.spmi.2012.08.009$$gVol. 52, no. 6, p. 1143 - 1154$$n6$$p1143 - 1154$$tSuperlattices and microstructures$$v52$$x0749-6036$$y2012
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