TY  - JOUR
AU  - Schmidt, Jan C.
AU  - Lisauskas, Alvydas
AU  - Roskos, Hartmut G.
AU  - Demarina, Nataliya
TI  - Electric field distribution in biased GaAs microstructures with field-pinning layers
JO  - Superlattices and microstructures
VL  - 52
IS  - 6
SN  - 0749-6036
CY  - Oxford [u.a.]
PB  - Elsevier Science, Academic Press
M1  - FZJ-2015-03865
SP  - 1143 - 1154
PY  - 2012
AB  - Field-pinning layers are an approach to improve the homogeneity of the electric field in a biased semiconductor structure of length above the Kroemer criterion. Building a THz Bloch oscillator with such a structure requires superlattice regions. Nevertheless, GaAs layers are investigated here. We compare different periodic structures (alternating transit and field-pinning layers) via simulating the field distribution. It is shown that the development of propagating Gunn domains is suppressed when field-pinning layers are included, but the homogeneity of the field is still not satisfying for the purpose of building a Bloch gain THz source. Depending on the temperature, intra- and inter-period inhomogeneities occur.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000311020200010
DO  - DOI:10.1016/j.spmi.2012.08.009
UR  - https://juser.fz-juelich.de/record/201571
ER  -