% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@ARTICLE{Schmidt:201571,
      author       = {Schmidt, Jan C. and Lisauskas, Alvydas and Roskos, Hartmut
                      G. and Demarina, Nataliya},
      title        = {{E}lectric field distribution in biased {G}a{A}s
                      microstructures with field-pinning layers},
      journal      = {Superlattices and microstructures},
      volume       = {52},
      number       = {6},
      issn         = {0749-6036},
      address      = {Oxford [u.a.]},
      publisher    = {Elsevier Science, Academic Press},
      reportid     = {FZJ-2015-03865},
      pages        = {1143 - 1154},
      year         = {2012},
      abstract     = {Field-pinning layers are an approach to improve the
                      homogeneity of the electric field in a biased semiconductor
                      structure of length above the Kroemer criterion. Building a
                      THz Bloch oscillator with such a structure requires
                      superlattice regions. Nevertheless, GaAs layers are
                      investigated here. We compare different periodic structures
                      (alternating transit and field-pinning layers) via
                      simulating the field distribution. It is shown that the
                      development of propagating Gunn domains is suppressed when
                      field-pinning layers are included, but the homogeneity of
                      the field is still not satisfying for the purpose of
                      building a Bloch gain THz source. Depending on the
                      temperature, intra- and inter-period inhomogeneities occur.},
      cin          = {PGI-2},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-2-20110106},
      pnm          = {421 - Frontiers of charge based Electronics (POF2-421)},
      pid          = {G:(DE-HGF)POF2-421},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000311020200010},
      doi          = {10.1016/j.spmi.2012.08.009},
      url          = {https://juser.fz-juelich.de/record/201571},
}