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| 001 | 201571 | ||
| 005 | 20210129215829.0 | ||
| 024 | 7 | _ | |a 10.1016/j.spmi.2012.08.009 |2 doi |
| 024 | 7 | _ | |a 0749-6036 |2 ISSN |
| 024 | 7 | _ | |a 1096-3677 |2 ISSN |
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| 037 | _ | _ | |a FZJ-2015-03865 |
| 041 | _ | _ | |a English |
| 082 | _ | _ | |a 530 |
| 100 | 1 | _ | |a Schmidt, Jan C. |0 P:(DE-HGF)0 |b 0 |
| 245 | _ | _ | |a Electric field distribution in biased GaAs microstructures with field-pinning layers |
| 260 | _ | _ | |a Oxford [u.a.] |c 2012 |b Elsevier Science, Academic Press |
| 336 | 7 | _ | |a Journal Article |b journal |m journal |0 PUB:(DE-HGF)16 |s 1435312387_10130 |2 PUB:(DE-HGF) |
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| 520 | _ | _ | |a Field-pinning layers are an approach to improve the homogeneity of the electric field in a biased semiconductor structure of length above the Kroemer criterion. Building a THz Bloch oscillator with such a structure requires superlattice regions. Nevertheless, GaAs layers are investigated here. We compare different periodic structures (alternating transit and field-pinning layers) via simulating the field distribution. It is shown that the development of propagating Gunn domains is suppressed when field-pinning layers are included, but the homogeneity of the field is still not satisfying for the purpose of building a Bloch gain THz source. Depending on the temperature, intra- and inter-period inhomogeneities occur. |
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| 700 | 1 | _ | |a Lisauskas, Alvydas |0 P:(DE-HGF)0 |b 1 |e Corresponding Author |
| 700 | 1 | _ | |a Roskos, Hartmut G. |0 P:(DE-HGF)0 |b 2 |
| 700 | 1 | _ | |a Demarina, Nataliya |0 P:(DE-Juel1)125576 |b 3 |e Corresponding Author |
| 773 | _ | _ | |a 10.1016/j.spmi.2012.08.009 |g Vol. 52, no. 6, p. 1143 - 1154 |0 PERI:(DE-600)1471791-8 |n 6 |p 1143 - 1154 |t Superlattices and microstructures |v 52 |y 2012 |x 0749-6036 |
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