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000201608 1001_ $$0P:(DE-Juel1)144926$$aKovács, A.$$b0$$eCorresponding Author$$ufzj
000201608 245__ $$aCharacterization of Fe-N nanocrystals and nitrogen–containing inclusions in (Ga,Fe)N thin films using transmission electron microscopy
000201608 260__ $$aMelville, NY$$bAmerican Inst. of Physics$$c2013
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000201608 520__ $$aNanometric inclusions filled with nitrogen, located adjacent to Fe n N (n = 3 or 4) nanocrystals within (Ga,Fe)N layers, are identified and characterized using scanning transmission electron microscopy (STEM) and electron energy-loss spectroscopy (EELS). High-resolution STEM images reveal a truncation of the Fe-N nanocrystals at their boundaries with the nitrogen-containing inclusions. A controlled electron beam hole drilling experiment is used to release nitrogen gas from an inclusion in situ in the electron microscope. The density of nitrogen in an individual inclusion is measured to be 1.4 ± 0.3 g/cm3. These observations provide an explanation for the location of surplus nitrogen in the (Ga,Fe)N layers, which is liberated by the nucleation of Fe n N (n > 1) nanocrystals during growth.
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000201608 7001_ $$0P:(DE-HGF)0$$aSchaffer, B.$$b1
000201608 7001_ $$0P:(DE-HGF)0$$aMoreno, M. S.$$b2
000201608 7001_ $$0P:(DE-HGF)0$$aJinschek, J. R.$$b3
000201608 7001_ $$0P:(DE-HGF)0$$aCraven, A. J.$$b4
000201608 7001_ $$0P:(DE-HGF)0$$aDietl, T.$$b5
000201608 7001_ $$0P:(DE-HGF)0$$aBonanni, A.$$b6
000201608 7001_ $$0P:(DE-Juel1)144121$$aDunin-Borkowski, Rafal$$b7$$ufzj
000201608 773__ $$0PERI:(DE-600)1476463-5$$a10.1063/1.4816049$$gVol. 114, no. 3, p. 033530 -$$n3$$p033530 -$$tJournal of applied physics$$v114$$x0021-8979$$y2013
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